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PTVA101K02EV-V1-R0

P1-P3P4-P6P7-P9
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-12
Thermally-Enhanced High Power RF LDMOS FET
1000 W, 50 V, 1030 / 1090 MHz
Description
The PTVA101K02EV LDMOS FET is designed for use in power
amplifi er applications in the 1030 MHz / 1090 MHz frequency band.
Features include high gain and thermally-enhanced package with
bolt-down fl ange. Manufactured with Wolfspeed's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTVA101K02EV
Package H-36275-4
Features
• Broadband input matching
• High gain and effi ciency
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 1000 W under MODE–S
pulse condition, (32µS ON / 18µS OFF) X 80,
LTDF = 6.4%.
RF Characteristics
Pulsed RF Performance (tested in Wolfspeed test fi xture)
V
DD
= 50 V, I
DQ
= 0.15 A, P
OUT
= 900 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle
Characteristic Symbol Min Typ Max Unit
Gain G
ps
17 18 21 dB
Drain Efficiency
D
62 65 — %
0
10
20
30
40
50
60
2
6
10
14
18
22
26
30 35 40 45 50 55 60 65
Drain Efficiency (%)
Gain (dB)
P
out
(dBm)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 150 mA, T
CASE
= 25°C
ƒ = 1030 MHz
128μs, 10%
128μs, 1%
MODE-S
a101k02ev_1-1
Gain
Efficiency
PTVA101K02EV
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-12
2
PTVA101K02EV
RF Characteristics
Typical RF Performance (not subject to production test, verifi ed by design/characterization in Wolfspeed test fi xture)
V
DD
= 50 V, I
DQ
= 75 mA per side, Input signal (t
r
= 5 ns, t
f
= 6.5 ns), T
CASE
= 25°C, class AB test
P
1dB
P
3dB
Mode of operation ƒ IRL Gain Eff P
OUT
Gain Eff P
OUT
P
droop(pulse)
t
r
t
f
(MHz) (dB) (dB) (%) (W) (dB) (%) (W) dB @ 1000 W (ns) (ns)
128 µs, 10% 1030 20 18 56 980 16 57 1090 0.18 7 8
128 µs, 1% 1030 20 18.1 57 1010 16.1 58 1130 0.16 7 8
MODE-S
1030 20 17.9 54 930 14.9 55 1060 0.45 7 8
(32µS ON / 18µS OFF)X80, LTDF=6.4%
128 µs, 10% 1090 13 18.3 59 920 16.2 60 1050 0.16 7 8
128 µs, 1% 1090 14 18.4 60 950 16.4 61 1080 0.17 7 8
DC Characteristics (each side)
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 mA V
(BR)DSS
105 — — V
Drain Leakage Current V
DS
= 50 V, V
GS
= 0 V I
DSS
— — 1 µA
V
DS
= 105 V, V
GS
= 0 V I
DSS
— — 10 µA
On-State Resistance V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 0.1 — 
Operating Gate Voltage V
DS
= 50 V, I
DQ
= 150 mA V
GS
3 3.35 4 V
Gate Leakage Current V
GS
= 10 V, V
DS
= 0 V I
GSS
— — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
105 V
Gate-Source Voltage V
GS
–6 to +12 V
Operating Voltage V
DD
0 to +55 V
Junction Temperature T
J
225 °C
Storage Temperature Range T
STG
–65 to +150 °C
Thermal Resistance (T
CASE
= 70°C, 1000 W, MODE–S) R
JC
0.16 °C/W
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-06-12
3
PTVA101K02EV
Ordering Information
Type and Version Order Code Package and Description Shipping
PTVA101K02EV V1 R0 PTVA101K02EV-V1-R0 H-36275-4, bolt-down Tape & Reel, 50pcs
PTVA101K02EV V1 R250 PTVA101K02EV-V1-R250 H-36275-4, bolt-down Tape & Reel, 250pcs
Typical RF Performance (tested with LTN/PTVA101K02EV V1 test fixture, 1030 MHz)
Drain Efficiency (%)
Gain (dB)
P
out
(dBm)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 150 mA, T
CASE
= 25°C
ƒ = 1030 MHz
128μs, 10%
128μs, 1%
MODE-S
2
6
10
14
18
22
26
20 24 28 32 36 40 44 48
Gain (dB)
P
IN
(dBm)
Power Sweep, Pulsed RF
V
DD
= 50 V, I
DQ
= 150 mA, T
CASE
= 25°C
ƒ = 1030 MHz
128μs, 10%
128μs, 1%
MODE-S
Gain
a101k02ev_1-2
P1-P3P4-P6P7-P9

PTVA101K02EV-V1-R0

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Buy PTVA101K02EV-V1-R0
Manufacturer:
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Description:
RF MOSFET Transistors RF LDMOS FET
Lifecycle:
New from this manufacturer.
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