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MMBT4403M3T5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
1 Publication Order Number:
MMBT4403M3/D
MMBT4403M3T5G
PNP Switching Transistor
The MMBT4403M3T5G device is a spin−off of our popular
SOT−23 three−leaded device. It is designed for general purpose
switching applications and is housed in the SOT−723 surface mount
package. This device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector −Emitter Voltage V
CEO
−40 Vdc
Collector −Base Voltage V
CBO
−40 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
265
2.1
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
640
5.1
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
195 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
MMBT4403M3T5G SOT−723
(Pb−Free)
8000/Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT−723
CASE 631AA
STYLE 1
1
2
3
AG M
AG = Specific Device Code
M = Date Code
MARKING
DIAGRAM
MMBT4403M3T5G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3) (I
C
= −1.0 mAdc, I
B
= 0) V
(BR)CEO
−40 − Vdc
Collector −Base Breakdown Voltage (I
C
= −0.1 mAdc, I
E
= 0) V
(BR)CBO
−40 − Vdc
Emitter−Base Breakdown Voltage (I
E
= −0.1 mAdc, I
C
= 0) V
(BR)EBO
−5.0 − Vdc
Base Cutoff Current (V
CE
= −35 Vdc, V
EB
= −0.4 Vdc) I
BEV
− −0.1
mAdc
Collector Cutoff Current (V
CE
= −35 Vdc, V
EB
= −0.4 Vdc) I
CEX
− −0.1
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(Note 3) (I
C
= −150 mAdc, V
CE
= −2.0 Vdc)
(Note 3) (I
C
= −500 mAdc, V
CE
= −2.0 Vdc)
h
FE
30
60
100
100
20
−
−
−
300
−
−
Collector −Emitter Saturation Voltage (Note 3)
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
CE(sat)
−
−
−0.4
−0.75
Vdc
Base −Emitter Saturation Voltage (Note 3)
(I
C
= −150 mAdc, I
B
= −15 mAdc)
(I
C
= −500 mAdc, I
B
= −50 mAdc)
V
BE(sat)
−0.75
−
−0.95
−1.3
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product (I
C
= −20 mAdc, V
CE
= −10 Vdc, f = 100 MHz) f
T
200 − MHz
Collector−Base Capacitance (V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz) C
cb
− 8.5 pF
Emitter−Base Capacitance (V
BE
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz) C
eb
− 30 pF
Input Impedance (I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz) h
ie
1.5 15
kW
Voltage Feedback Ratio (I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz) h
re
0.1 8.0 X 10
− 4
Small− Signal Current Gain (I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz) h
fe
60 500 −
Output Admittance (I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz) h
oe
1.0 100
mMhos
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= −30 Vdc, V
EB
= −2.0 Vdc,
I
C
= −150 mAdc, I
B1
= −15 mAdc)
t
d
− 15
ns
Rise Time t
r
− 20
Storage Time
(V
CC
= −30 Vdc, I
C
= −150 mAdc,
I
B1
= I
B2
= −15 mAdc)
t
s
− 225
ns
Fall Time t
f
− 30
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Fi
g
ure 1. Turn−On Time Fi
g
ure 2. Turn−Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUIT
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
+2 V
-16 V
10 to 100 ms,
DUTY CYCLE = 2%
0
1.0 kW
-30 V
200 W
C
S
* < 10 pF
1.0 kW
-30 V
200 W
C
S
* < 10
p
+4.0 V
< 2 ns
1.0 to 100 ms,
DUTY CYCLE = 2%
< 20 ns
+14 V
0
-16 V
MMBT4403M3T5G
http://onsemi.com
3
STATIC CHARACTERISTICS
I
C
, COLLECTOR CURRENT (A)
250
300
350
450
100
h , DC CURRENT GAIN
0.01 1
50
0.1
FE
0.001
0.0001
150
200
400
-55°C
T
J
= 150°C
25°C
Figure 3. DC Current Gain
I
b
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
0.2
0.4
0.6
0.8
1.2
0.001
0
10 100
1.0
Figure 5. Collector−Emitter Saturation Voltage
vs. Collector Current
Figure 6. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
0.5
0
0.5
1.0
1.5
2.0
q
VC
for V
CE(sat)
q
VS
for V
BE
COEFFICIENT (mV/ C)°
2.5
1.0 2.0 5.0 10 20
50 100 500200
0.1 0.2 0.5
0.01 0.1 1
I
C
= 1.0 mA
10 mA 100 mA 500 mA
V
CE
= 5.0 V
V
CE
= 2.0 V
V
CE
= 1.0 V
I
C
, COLLECTOR CURRENT (A)
0.15
0.20
0.30
0.35
0.05
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0.01
0.1
0
1
150°C
0.0001
-55°C
0.001
25°C
0.10
0.25
I
C
/I
B
= 10
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
P1-P3P4-P5

MMBT4403M3T5G

Mfr. #:
Buy MMBT4403M3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SOT-723 GP PNP TRANS
Lifecycle:
New from this manufacturer.
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