2SC2235-Y,USNHF(M

2SC2235
2009-12-21
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2235
Audio Power Amplifier Applications
Driver Stage Amplifier Applications
Complementary to 2SA965.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
120 V
Collector-emitter voltage V
CEO
120 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
800 mA
Base current I
B
80 mA
Collector power dissipation P
C
900 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
55 to 150 °C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC TO-92MOD
JEITA
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
2SC2235
2009-12-21
2
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= 120 V, I
E
= 0 100 nA
Emitter cut-off current I
EBO
V
EB
= 5 V, I
C
= 0 100 nA
Collector-emitter breakdown voltage V
(BR) CEO
I
C
= 10 mA, I
B
= 0 120 V
Emitter-base breakdown voltage V
(BR) EBO
I
E
= 1 mA, I
C
= 0 5 V
DC current gain
h
FE
(Note 2)
V
CE
= 5 V, I
C
= 100 mA 80 240
Collector-emitter saturation voltage V
CE (sat)
I
C
= 500 mA, I
B
= 50 mA 1.0 V
Base-emitter voltage V
BE
V
CE
= 5 V, I
C
= 500 mA 1.0 V
Transition frequency f
T
V
CE
= 5 V, I
C
= 100 mA 120 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 30 pF
Note 2: h
FE
classification O: 80 to 160, Y: 120 to 240
Marking
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: `Pb`/INCLUDES > MCV
Underlined: `G`/RoHS COMPATIBLE or `G`/RoHS `Pb`
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
C2235
Lot No.
Note 3
Characteristics
indicator
Part No. (or abbreviation code)
2SC2235
2009-12-21
3
Collector-emitter voltage V
CE
(V)
I
C
– V
CE
Collector current I
C
(mA)
h
FE
– I
C
Collector current I
C
(mA)
V
CE (sat)
– I
C
Collector-emitter saturation voltage
V
CE
(sat)
(V)
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
Ambient temperature Ta (°C)
Collector power dissipation P
C
(mW)
I
C
– V
BE
P
C
– Ta
Collector current I
C
(mA)
DC current gain h
FE
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Safe Operating Area
10 3 30 100 300
1000
100
10
30
50
300
1000
500
Common emitter
V
CE
= 5 V
Ta = 100°C
25
25
1000
0
0
600
400
200
2 4 6
Common emitter
Ta = 25°C
10 7
I
B
= 1 mA
15
8
4
3
2
10 12 14
800
5
0
300
Common emitter
I
C
/I
B
= 10
0.5
3
0.3
0.05
0.03
0.01
10 30 100 1000
0.1
Ta = 100°C
25
25
0.2 0 0.4 0.6 0.8 1.0
800
0
200
400
1.2
600
Common emitter
V
CE
= 5 V
Ta = 100°C 25 25
20 0 40 60 100 120
1000
200
0
400
600
80 140 160
800
*: Single nonrepetitive
pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
1
0.5
5
10
30
50
100
300
500
10 50 1000
I
C
max (continuous)
I
C
max (pulsed)*
1 ms*
10 ms*
100 ms* DC
operation
3
3000
1
1000
3
5 30 100 300 500

2SC2235-Y,USNHF(M

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