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IRLU2905ZPBF

P1-P3P4-P6P7-P9P10-P11
IRLR2905ZPbF
IRLU2905ZPbF
HEXFET
®
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 13.5mΩ
I
D
= 42A
10/1/10
www.irf.com 1
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
S
D
G
Description
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
D-Pak
IRLR2905ZPbF
I-Pak
IRLU2905ZPbF
HEXFET
®
is a registered trademark of International Rectifier.
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
P
u
l
se
d D
ra
i
n
C
urrent
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
mJ
E
AS
(Tested )
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy T
este
d V
a
l
ue
I
AR
A
va
l
anc
h
e
C
urrent
A
E
AR
R
epet
i
t
i
ve
A
va
l
anc
h
e
E
ner
gy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
J
unct
i
on-to-
C
ase
––– 1.38
R
θ
JA
J
unct
i
on-to-
A
m
bi
ent
(PCB
mount
)
––– 40 °C/W
R
θ
JA
J
unct
i
on-to-
A
m
bi
ent
––– 110
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N m)
110
0.72
± 16
Max.
60
43
240
42
85
57
See Fig.12a, 12b, 15, 16
PD - 95774B
IRLR/U2905ZPbF
2 www.irf.com
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V
∆
V
(BR)DSS
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 11 13.5
m
Ω
––– ––– 20
m
Ω
––– ––– 22.5
m
Ω
V
GS(th)
Gate Threshold Voltage 1.0 ––– 3.0 V
gfs Forward Transconductance 25 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Q
g
Total Gate Charge ––– 23 35
Q
gs
Gate-to-Source Charge ––– 8.5 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 12 –––
t
d(on)
Turn-On Delay Time ––– 14 –––
t
r
Rise Time ––– 130 –––
t
d(off)
Turn-Off Delay Time ––– 24 ––– ns
t
f
Fall Time ––– 33 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 1570 –––
C
oss
Output Capacitance ––– 230 –––
C
rss
Reverse Transfer Capacitance ––– 130 ––– pF
C
oss
Output Capacitance ––– 840 –––
C
oss
Output Capacitance ––– 180 –––
C
oss
eff.
Effective Output Capacitance ––– 290 –––
Source-Drain Ratin
g
s and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 42
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 240
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 22 33 ns
Q
rr
Reverse Recovery Charge ––– 14 21 nC
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 5.0V, I
D
= 30A
V
GS
= 16V
V
GS
= -16V
V
DS
= 44V
Conditions
V
GS
= 5.0V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 36A, V
GS
= 0V
T
J
= 25°C, I
F
= 36A, V
DD
= 28V
di/dt = 100A/µs
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 36A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 4.5V, I
D
= 15A
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
GS
= 5.0V
V
DD
= 28V
I
D
= 36A
R
G
= 15
Ω
V
DS
= 25V, I
D
= 36A
I
D
= 36A
IRLR/U2905ZPbF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
V
GS
, Gate-to-Source Voltage (V)
1.0
10.0
100.0
1000.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 10V
≤
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
0 1020304050
I
D,
Drain-to-Source Current (A)
0
10
20
30
40
50
60
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 8.0V
380µs PULSE WIDTH
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤ 60µs PULSE WIDTH
Tj = 25°C
3.0V
VGS
TOP 10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤ 60µs PULSE WIDTH
Tj = 175°C
3.0V
VGS
TOP 10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
P1-P3P4-P6P7-P9P10-P11

IRLU2905ZPBF

Mfr. #:
Buy IRLU2905ZPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl
Lifecycle:
New from this manufacturer.
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