2SD1407A-Y(F) Datasheet 2SD1407A-Y(F) | P1-P3

2SD1407A

2009-07-24

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SD1407A

Power Amplifier Applications

• High breakdown voltage: V

CEO

= 100 V

• Low collector saturation voltage: V

CE (sat)

= 2.0 V (max)

• Complementary to 2SB1016A

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage V

CBO

100 V

Collector-emitter voltage V

CEO

100 V

Emitter-base voltage V

EBO

5 V

Collector current I

C

5 A

Base current I

B

0.5 A

Collector power dissipation

(Tc = 25°C)

P

C

30 W

Junction temperature T

j

150 °C

Storage temperature range T

stg

−55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Industrial Applications

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-10R1A

Weight: 1.7 g (typ.)

2SD1407A

2009-07-24

2

Electrical Characteristics

(Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current I

CBO

V

CB

= 100 V, I

E

= 0 ― ― 100 μA

Emitter cut-off current I

EBO

V

EB

= 5 V, I

C

= 0 ― ― 1 mA

Collector-emitter breakdown voltage V

(BR) CEO

I

C

= 50 mA, I

B

= 0 100 ― ― V

h

FE (1)

(Note 1)

V

CE

= 5 V, I

C

= 1 A 40 ― 240

DC current gain

h

FE (2)

V

CE

= 5 V, I

C

= 4 A 20 ― ―

Collector-emitter saturation voltage V

CE (sat)

I

C

= 4 A, I

B

= 0.4 A ― ― 2.0 V

Base-emitter saturation voltage V

BE

V

CE

= 5 V, I

C

= 1 A ― ― 1.5 V

Transition frequency f

T

V

CE

= 5 V, I

C

= 1 A ― 12 ― MHz

Collector output capacitance C

ob

V

CB

= 10 V, I

E

= 0, f = 1 MHz ― 100 ― pF

Note 1: h

FE (1)

classification R: 40 to 80, O: 70 to 140, Y: 120 to 240

Marking

Note 2: A line under a Lot No. identifies the indication of product Labels.

`G`/RoHS COMPATIBLE or `G`/RoHS `Pb`

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the

restriction of the use of certain hazardous substances in electrical and electronic equipment.

Lot No.

Note 2

D1407A

Characteristics

indicator

Part No. (or abbreviation code)

2SD1407A

2009-07-24

3

Collector-emitter voltage V

CE

(V)

I

C

– V

CE

Collector current I

C

(A)

Base-emitter voltage V

BE

(V)

I

C

– V

BE

Collector current I

C

(A)

Collector current I

C

(A)

h

FE

– I

C

DC current gain h

FE

Collector current I

C

(A)

V

CE (sat)

– I

C

Collector-emitter saturation voltage

V

CE (sat)

(V)

Collector-emitter voltage V

CE

(V)

Safe Operating Area

Collector current I

C

(A)

50

I

B

= 20 mA

100

150

250

200

300

5

0

Common emitter

Tc = 25°C

1 2 3 4 5 6

1

2

3

4

−25

25

Tc = 75°C

5

0

Common emitter

V

CE

= 5 V

0.4 0.8 1.2 1.6 2.0 2.4

1

2

3

4

−25

25

Tc = 75°C

500

10

0.01

Common emitter

V

CE

= 5 V

0.03 0.1 0.3 1 3 5

30

50

100

300

−25

25

Tc = 75°C

2

0.03

0.01

Common emitter

I

C

/I

B

= 10

0.03 0.1 0.3 1 3 5

0.05

0.1

0.3

0.5

1

1 ms*

I

C

max (pulsed)*

DC operation

Tc = 25°C

I

C

max (continuous)

10 ms*

100 ms*

1 s*

V

CEO

max

20

0.1

3

*: Single nonrepetitive

pulse Tc = 25°C

Curves must be derated

linearly with increase in

temperature.

10 30 100 300

0.3

0.5

1

3

5

10

Ambient temperature Ta (°C)

P

C

– Ta

Collector power dissipation P

C

(W)

50

0

Tc = Ta

Infinite heat sink

25 50 75 100 125 150

10

20

30

40

2SD1407A-Y(F)

2SD1407A-Y(F)

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