HUF76013D3S Datasheet HUF76013D3S, HUF76013D3ST, HUF76013P3 | P1-P3

HUF76013P3, HUF76013D3S

20A, 20V, 0.022 Ohm, N-Channel, Logic

Level Power MOSFETs

The HUF76013 is an application-specific MOSFET

optimized for switching when used as the upper switch in

synchronous buck applications. The low gate charge and low

input capacitance results in lower driver and lower switching

losses thereby increasing the overall system efficiency.

Symbol

Packaging

Features

• 20A, 20V

-r

DS(ON)

= 0.022Ω, V

GS

= 10V

-r

DS(ON)

= 0.030Ω, V

GS

= 5V

• PWM Optimized for Synchronous Buck Applications

•Fast Switching

• Low Gate Charge

-Q

g

Total 14nC (Typ)

• Low Capacitance

-C

ISS

624pF (Typ)

-C

RSS

71pF (Typ)

HUF76013D3S

JEDEC TO-252AA

HUF76013P3

JEDEC TO-220AB

D

G

S

GATE

SOURCE

DRAIN (FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76013P3 TO-220AB 76013P

HUF76013D3S TO-252AA 76013D

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the HUF76013D3S in tape and reel, e.g., HUF76013D3ST.

Absolute Maximum Ratings

T

C

= 25

o

C, Unless Otherwise Specified

SYMBOL PARAMETER

HUF76013P3,

HUF76013D3S UNITS

V

DSS

Drain to Source Voltage (Note 1) 20 V

V

DGR

Drain to Gate Voltage (R

GS

= 20kΩ) (Note 1) 20 V

V

GS

Gate to Source Voltage ±20 V

I

D

I

D

I

DM

Drain Current

Continuous (T

C

= 25

o

C, V

GS

= 10V) (Figure 2)

Continuous (T

C

= 100

o

C, V

GS

= 5V)

Pulsed Drain Current

20

Figure 4

A

P

D

Power Dissipation

Derate Above 25

o

C

50

0.4

W

W/

o

C

T

J

, T

STG

Operating and Storage Temperature -55 to 150

o

C

T

L

T

pkg

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

300

260

o

C

o

C

THERMAL SPECIFICATIONS

R

θJC

Thermal Resistance Junction to Case, TO-220, TO-252 2.5

o

C/W

R

θJA

Thermal Resistance Junction to Ambient TO-220 62

o

C/W

Thermal Resistance Junction to Ambient TO-252 100

o

C/W

NOTE:

1. T

J

= 25

o

C to 125

o

C.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Data Sheet October 2004

Electrical Specifications

T

C

= 25

o

C, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

DSS

I

D

= 250µA, V

GS

= 0V (Figure 11) 20 - - V

Zero Gate Voltage Drain Current I

DSS

V

DS

= 20V, V

GS

= 0V - - 1 µA

V

DS

= 20V, V

GS

= 0V, T

C

= 150

o

C - - 250 µA

Gate to Source Leakage Current I

GSS

V

GS

= ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V

GS(TH)

V

GS

= V

DS

, I

D

= 250µA (Figure 10) 1 - 3 V

Drain to Source ON Resistance r

DS(ON)

I

D

= 20A, V

GS

= 10V (Figures 8, 9) - 0.018 0.022 Ω

I

D

= 20A, V

GS

= 5V (Figure 8) - 0.025 0.030 Ω

SWITCHING SPECIFICATIONS (V

GS

= 5V)

Turn-On Time t

ON

V

DD

= 10V, I

D

= 20A

V

GS

= 5V, R

GS

= 19Ω

(Figures 14, 18, 19)

- - 197 ns

Turn-On Delay Time t

d(ON)

-11-ns

Rise Time t

r

- 120 - ns

Turn-Off Delay Time t

d(OFF)

-19-ns

Fall Time t

f

-30-ns

Turn-Off Time t

OFF

- - 72 ns

SWITCHING SPECIFICATIONS (V

GS

= 10V)

Turn-On Time t

ON

V

DD

= 10V, I

D

= 20A

V

GS

= 10V,

R

GS

= 19Ω

(Figures 15, 18, 19)

- - 151 ns

Turn-On Delay Time t

d(ON)

-7-ns

Rise Time t

r

-93-ns

Turn-Off Delay Time t

d(OFF)

-37-ns

Fall Time t

f

-29-ns

Turn-Off Time t

OFF

- - 100 ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge at 10V Q

g(TOT)

V

GS

= 0V to 10V V

DD

= 10V,

I

D

= 20A,

I

g(REF)

= 1.0mA

(Figures 13, 16, 17)

- 14.4 17 nC

Total Gate Charge at 5V Q

g(TOT)

V

GS

= 0V to 5V - 7.8 9 nC

Threshold Gate Charge Q

g(TH)

V

GS

= 0V to 1V - 0.9 1 nC

Gate to Source Gate Charge Q

gs

-3.5-nC

Gate to Drain “Miller” Charge Q

gd

-3.2-nC

CAPACITANCE SPECIFICATIONS

Input Capacitance C

ISS

V

DS

= 20V, V

GS

= 0V,

f = 1MHz

(Figure 12)

- 624 - pF

Output Capacitance C

OSS

- 444 - pF

Reverse Transfer Capacitance C

RSS

-71-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

I

SD

= 20A - - 1.25 V

I

SD

= 10A - - 1.0 V

Reverse Recovery Time t

rr

I

SD

= 20A, dI

SD

/dt = 100A/µs--55ns

Reverse Recovered Charge Q

RR

I

SD

= 20A, dI

SD

/dt = 100A/µs--82nC

HUF76013P3, HUF76013D3S

Typical Performance Curves

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

FIGURE 4. PEAK CURRENT CAPABILITY

T

A

, AMBIENT TEMPERATURE (

o

C)

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 15

0

0.2

0.4

0.6

0.8

1.0

1.2

125

0

5

10

15

20

25

25 50 75 100 125 15

0

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

V

GS

= 10V

V

GS

= 5.0V

0.1

1

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

0.01

2

t, RECTANGULAR PULSE DURATION (s)

Z

θJC

, NORMALIZED

SINGLE PULSE

NOTES:

DUTY FACTOR: D = t

1

/t

2

PEAK T

J

= P

DM

x Z

θJC

x R

θJC

+ T

C

P

DM

t

1

t

2

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.01

0.02

THERMAL IMPEDANCE

10

100

10

-5

1000

10

-4

10

-3

10

-2

10

-1

10

0

10

1

I

DM

, PEAK CURRENT (A)

t, PULSE WIDTH (s)

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

T

C

= 25

o

C

I = I

25

150 - T

C

125

FOR TEMPERATURES

ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

V

GS

= 10V

V

GS

= 5V

HUF76013P3, HUF76013D3S

HUF76013D3S

HUF76013D3S

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