8ETH03S

Document Number: 93933 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 08-Sep-08 1
Hyperfast Rectifier,
8 A FRED Pt
TM
8ETH03S/8ETH03-1
Vishay High Power Products
FEATURES
Hyperfast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
t
rr
35 ns
I
F(AV)
8 A
V
R
300 V
8ETH03S
Anode
1
3
Base
cathode
2
N/C
D
2
PAK
TO-262
Anode
1
3
2
N/C
8ETH03-1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
RRM
300 V
Average rectified forward current I
F(AV)
T
C
= 155 °C 8
A
Non-repetitive peak surge current I
FSM
T
C
= 25 °C 100
Operating junction and storage temperatures T
J
, T
Stg
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 µA 300 - -
V
Forward voltage V
F
I
F
= 8 A - 1.0 1.25
I
F
= 8 A, T
J
= 125 °C - 0.83 1.00
Reverse leakage current I
R
V
R
= V
R
rated - 0.02 20
µA
T
J
= 125 °C, V
R
= V
R
rated - 6.0 200
Junction capacitance C
T
V
R
= 300 V - 31 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93933
2 Revision: 08-Sep-08
8ETH03S/8ETH03-1
Vishay High Power Products
Hyperfast Rectifier,
8 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = - 50 A/µs, V
R
= 30 V - - 35
nsT
J
= 25 °C
I
F
= 8 A
dI
F
/dt = - 200 A/µs
V
R
= 200 V
-27-
T
J
= 125 °C - 40 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.2 -
A
T
J
= 125 °C - 5.3 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 30 -
nC
T
J
= 125 °C - 106 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
-1.452.5
°C/W
Thermal resistance,
junction to ambient per leg
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.2-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK 8ETH03S
Case style TO-262 8ETH03-1
Document Number: 93933 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 08-Sep-08 3
8ETH03S/8ETH03-1
Hyperfast Rectifier,
8 A FRED Pt
TM
Vishay High Power Products
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
0.4 1.81.0
0.8
1.4
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous
Forward Current (A)
100
0.6 1.2 1.6
2.0
0.01
0.1
1
10
100
0 100 200
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
150
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
50
0.001
1000
300250
100
1000
0 100 200 250 300
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
15050
T
J
= 25 °C
0.01
0.1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)

8ETH03S

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 78-VS-8ETH03S-M3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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