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SIR330DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
www.vishay.com
4
Document Number: 67089
S10-2604-Rev. A, 15-Nov-10
Vishay Siliconix
SiR330DP
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
=5mA
I
D
= 250 μA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
0.000
0.004
0.008
0.012
0.016
0.020
012345678910
T
J
=25 °C
T
J
= 125 °C
I
D
=10A
0
40
80
120
160
200
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area
0.01
100
1
100
0.01
0.1
10 s
10 ms
0.1 1 10
10
T
A
= 25 °C
Single Pulse
1ms
DC
BVDSS Limited
1s
100 ms
Limited by R
DS(on)
*
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
D
- Drain Current (A)
Document Number: 67089
S10-2604-Rev. A, 15-Nov-10
www.vishay.com
5
Vishay Siliconix
SiR330DP
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
12
24
36
48
60
0 255075100125150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power, Junction-to-Case
0
7
14
21
28
35
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.0
0.5
1.0
1.5
2.0
2.5
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 67089
S10-2604-Rev. A, 15-Nov-10
Vishay Siliconix
SiR330DP
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67089
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
P1-P3P4-P6P7-P9P10-P12P13-P13

SIR330DP-T1-GE3

Mfr. #:
Buy SIR330DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SIRA14DP-T1-GE3
Lifecycle:
New from this manufacturer.
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