IRFR3711TRL Datasheet IRFR3711TRL, IRFR3711TRR, IRFU3711 | P1-P3

www.irf.com 1

1/27/04

IRFR3711

IRFU3711

SMPS MOSFET

HEXFET

®

Power MOSFET

V

DSS

R

DS(on)

max I

D

20V 6.5mΩ 110A



Notes  through  are on page 10

D-Pak I-Pak

IRFR3711 IRFU3711

Applications

Benefits

l Ultra-Low Gate Impedance

l Very Low RDS(on) at 4.5V V

GS

l Fully Characterized Avalanche Voltage

and Current

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Industrial Use

l High Frequency Buck Converters for

Server Processor Power Synchronous FET

l Optimized for Synchronous Buck

Converters Including Capacitive Induced

Turn-on Immunity

l 100% R

G

Tested

Absolute Maximum Ratin

g

s

Symbol Parameter Units

V

DS

Drain-Source Voltage V

V

GS

Gate-Source Voltage

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V

A

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C

Maximum Power Dissipation

W

P

D

@T

C

= 25°C Maximum Power Dissipation

Linear Derating Factor W/°C

T

J

, T

STG

Junction and Storage Temperature Range °C

Thermal Resistance

Symbol Parameter Typ Max Units

R

θJC

Junction-to-Case

––– 1.04

R

θJA

Junction-to-Ambient (PCB Mount)

––– 50 °C/W

R

θJA

Junction-to-Ambient

––– 110

-55 to +150

Max

100

69

440

20

± 20

2.5

0.96

120

PD- 94061B

IRFR/U3711

2 www.irf.com

Static @ T

J

= 25°C (unless otherwise specified)

Symbol Parameter Min Typ Max Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 20 ––– ––– V

∆V

(BR)DSS

/

∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C

––– 5.2 6.5

––– 6.7 8.5

V

GS(th)

Gate Threshold Voltage 1.0 ––– 3.0 V

––– ––– 140

––– ––– 20

––– ––– 100

Gate-to-Source Forward Leakage ––– ––– 200

Gate-to-Source Reverse Leakage ––– ––– -200

Dynamic @ T

J

= 25°C (unless otherwise specified)

Symbol Parameter Min Typ Max Units

g

fs

Forward Transconductance 53 ––– ––– S

Q

g

Total Gate Charge ––– 29 44

Q

gs

Gate-to-Source Charge ––– 7.3 –––

Q

gd

Gate-to-Drain ("Miller") Charge ––– 8.9 –––

Q

oss

Output Gate Charge ––– 33 –––

V

GS

= 0V, V

DS

=

10V

R

G

Gate Resistance 0.3 ––– 2.5

Ω

t

d(on)

Turn-On Delay Time ––– 12 –––

t

r

Rise Time ––– 220 –––

t

d(off)

Turn-Off Delay Time ––– 17 –––

t

f

Fall Time ––– 12 –––

C

iss

Input Capacitance ––– 2980 –––

C

oss

Output Capacitance ––– 1770 –––

C

rss

Reverse Transfer Capacitance ––– 280 –––

Avalanche Characteristics

Symbol

Parameter Units

E

AS

Sin

g

le Pulse Avalanche Ener

gy

mJ

I

AR

Avalanche Current

A

Diode Characteristics

Symbol Parameter Min Typ Max Units

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

––– 0.88 1.3

––– 0.82 –––

t

rr

Reverse Recovery Time ––– 50 75 ns

Q

rr

Reverse Recovery Charge ––– 61 92 nC

t

rr

Reverse Recovery Time ––– 48 72 ns

Q

rr

Reverse Recovery Charge ––– 65 98 nC

Typ

440

VDiode Forward Voltage

A

––– 110

––– –––

I

S

I

SM

V

SD

–––

nA

ns

nC

pF

30

MOSFET symbol

showing the

R

DS(on)

I

DSS

I

GSS

Static Drain-to-Source On-Resistance

Drain-to-Source Leakage Current

m

Ω

µA

T

J

= 125°C, I

F

= 16A, V

R

= 10V

di/dt = 100A/µs

T

J

= 125°C, I

S

= 30A, V

GS

= 0V

Conditions

integral reverse

p-n junction diode.

T

J

= 25°C, I

S

= 30A, V

GS

= 0V

T

J

= 25°C, I

F

= 16A, V

R

= 10V

di/dt = 100A/µs

–––

Conditions

V

DS

= 16V, I

D

= 30A

I

D

= 15A

V

DS

= 10V

V

GS

= 4.5V

V

GS

= 0V

V

DS

= 10V

460

V

DS

= 20V, V

GS

= 0V

V

DS

= 16V, V

GS

= 0V, T

J

= 125°C

V

GS

= 20V

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 15A

V

GS

= -20V

V

GS

= 4.5V, I

D

= 12A

Max

V

GS

= 4.5V

V

DD

= 10V

I

D

= 30A

R

G

= 1.8Ω

V

DS

= 16V, V

GS

= 0V

ƒ = 1.0MHz

V

DS

= V

GS

, I

D

= 250µA

IRFR/U3711

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J

°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.7V

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J

°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.7V

10

100

1000

2.0 3.0 4.0 5.0 6.0 7.0 8.0

V = 25V

20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J

°

T = 150 C

J

°

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

110A

IRFR3711TRL

IRFR3711TRL

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