STT13005

P1-P3 P4-P6 P7-P9 P10-P10

November 2009 Doc ID 13613 Rev 3 1/10

10

STT13005

High voltage fast-switching NPN power transistor

Features

■ High voltage capability

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Applications

■ Electronic ballast for fluorescent lighting

■ Flyback and forward single transistor low

power converters

Description

The device is manufactured using high voltage

multi-epitaxial planar technology for high

switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use in lighting

applications and low cost switch-mode power

supplies.

Figure 1. Internal schematic diagram

SOT-32

3

2

1

Table 1. Device summary

Order codes Marking Package Packaging

STT13005 T13005 SOT-32 Tube

STT13005-K T13005 SOT-32 Bag

www.st.com

Electrical ratings STT13005

2/10 Doc ID 13613 Rev 3

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

CES

Collector-emitter voltage (V

BE

= 0) 700 V

V

CEO

Collector-emitter voltage (I

B

= 0) 400 V

V

EBO

Emitter-base voltage (I

C

= 0) 9 V

I

C

Collector current 2 A

I

CM

Collector peak current (t

P

< 5 ms) 4 A

I

B

Base current 1 A

I

BM

Base peak current (t

P

< 5 ms) 2 A

P

tot

Total dissipation at T

c

= 25 °C 45 W

T

stg

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

R

thJC

Thermal resistance junction-case Max 2.8 °C/W

STT13005 Electrical characteristics

Doc ID 13613 Rev 3 3/10

2 Electrical characteristics

T

case

= 25 °C unless otherwise specified.

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CES

Collector cut-off current

(V

BE

= 0)

V

CE

= 700 V

V

CE

= 700 V T

C

= 125 °C

100

500

µA

µA

I

CEO

Collector cut-off current

(I

B

= 0)

V

CE

= 400 V 250 µA

V

EBO

Emitter-base voltage

(I

C

= 0)

I

E

= 10 mA 9 V

V

CEO(sus)

(1)

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %

Collector-emitter

sustaining voltage

(I

B

= 0)

I

C

= 10 mA 400

V

V

CE(sat)

(1)

Collector-emitter

saturation voltage

I

C

= 0.5 A I

B

= 125 mA

I

C

= 0.8 A _ I

B

= 0.2 A

I

C

= 1.6 A _ I

B

= 0.4 A

0.5

1

1.5

V

V

V

V

BE(sat)

(1)

Base-emitter saturation

voltage

I

C

= 0.5 A I

B

= 125 mA

I

C

= 0.8 A _ I

B

= 0.2 A

I

C

= 1.6 A _ I

B

= 0.4 A

1

1.3

1.5

V

V

V

h

FE

(1)

DC current gain

I

C

= 0.5 A _ V

CE

= 5 V

I

C

= 2 A _ _ V

CE

= 5 V

10

8

50

t

r

t

s

t

f

Resistive load

Rise time

Storage time

Fall time

I

C

= 1 A V

CC

= 125 V

I

B1

= -I

B2

= 0.2 A

0.4

3.2

0.25

0.7

4.5

0.4

µs

µs

µs

t

s

t

f

Inductive load

Storage time

Fall time

I

C

= 1 A I

B1

= 0.2 A

V

BE(off)

= -5 V L = 50 mH

V

Clamp

= 300 V

0.8

0.16

µs

µs

P1-P3 P4-P6 P7-P9 P10-P10

STT13005

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT RECTIFIER

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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