AT29LV256-15TC

1
Features
Single Supply Voltage, Range 3V to 3.6V
3-Volt Only Read and Write Operation
Software Protected Programming
Low Power Dissipation
15 mA Active Current
40 µA CMOS Standby Current
Fast Read Access Time - 150 ns
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
512 Sectors (64 bytes/sector)
Internal Address and Data Latches for 64 Bytes
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29LV256 is a 3-volt-only in-system Flash Programmable Erasable Read Only
Memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 150 ns with power dissipation of just 54 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 40 µA. The device endurance is such that any sector can typically be written to in
excess of 10,000 times.
256K (32K x 8)
3-volt Only
Flash Memory
AT29LV256
Rev. 0563B–10/98
Pin Configurations
Pin Name Function
A0 - A14 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I
/
O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5
A7
A12
WE
DC
VCC
A14
A13
(continued)
TSOP Top View
Type 1
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
OE
A11
A9
A8
A13
A14
VCC
WE
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
AT29LV256
2
To allow for simple in-system reprogrammability, the
AT29LV256 does not require high input voltages for pro-
gramming. Three-volt-only commands determine the oper-
ation of the device. Reading data out of the device is similar
to reading from an EPROM. Reprogramming the
AT29LV256 is performed on a sector basis; 64 bytes of
data are loaded into the device and then simultaneously
programmed.
During a reprogram cycle, the address locations and 64
bytes of data are captured at microprocessor speed and
internally latched, freeing the address and data bus for
other operations. Following the initiation of a program
cycle, the device will automatically erase the sector and
then program the latched data using an internal control
timer. The end of a program cycle can be detected by
DATA
polling of I/O7. Once the end of a program cycle has
been detected, a new access for a read or program can
begin.
Block Diagram
Device Operation
READ:
The AT29LV256 is accessed like an EPROM.
When CE
and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE
or OE is high. This dual-line
control gives designers flexibility in preventing bus conten-
tion.
SOFTWARE DATA PROTECTION PROGRAMMING:
The
AT29LV256 has 512 individual sectors, each 64 bytes.
Using the software data protection feature, byte loads are
used to enter the 64 bytes of a sector to be programmed.
The AT29LV256 can only be programmed or repro-
grammed using the software data protection feature. The
device is programmed on a sector basis. If a byte of data
within the sector is to be changed, data for the entire 64-
byte sector must be loaded into the device. The
AT29LV256 automatically does a sector erase prior to
loading the data into the sector. An erase command is not
required.
Software data protection protects the device from inadvert-
ent programming. A series of three program commands to
specific addresses with specific data must be presented to
the device before programming may occur. The same three
program commands must begin each program operation.
All software program commands must obey the sector pro-
gram timing specifications. Power transitions will not reset
the software data protection feature, however the software
feature will guard against inadvertent program cycles dur-
ing power transitions.
Any attempt to write to the device without the 3-byte com-
mand sequence will start the internal write timers. No data
will be written to the device; however, for the duration of
t
WC
, a read operation will effectively be a polling operation.
After the software data protection’s 3-byte command code
is given, a byte load is performed by applying a low pulse
on the WE
or CE input with CE or WE low (respectively)
and OE
high. The address is latched on the falling edge of
CE
or WE, whichever occurs last. The data is latched by
the first rising edge of CE
or WE.
The 64 bytes of data must be loaded into each sector. Any
byte that is not loaded during the programming of its sector
will be erased to read FFh. Once the bytes of a sector are
loaded into the device, they are simultaneously pro-
grammed during the internal programming period. After the
first data byte has been loaded into the device, successive
bytes are entered in the same manner. Each new byte to
be programmed must have its high to low transition on WE
(or CE) within 150 µs of the low to high transition of WE (or
CE
) of the preceding byte. If a high to low transition is not
detected within 150 µs of the last low to high transition, the
load period will end and the internal programming period
AT29LV256
3
will start. A6 to A14 specify the sector address. The sector
address must be valid during each high to low transition of
WE
(or CE). A0 to A5 specify the byte address within the
sector. The bytes may be loaded in any order; sequential
loading is not required. Once a programming operation has
been initiated, and for the duration of t
WC
, a read operation
will effectively be a polling operation.
HARDWARE DATA PROTECTION:
Hardware features
protect against inadvertent programs to the AT29LV256 in
the following ways: (a) V
CC
sense—if V
CC
is below 1.8V
(typical), the program function is inhibited; (b) V
CC
power on
delay—once V
CC
has reached the V
CC
sense level, the
device will automatically time out 10 ms (typical) before
programming; (c) Program inhibit— olding any one of OE
low, CE high or WE high inhibits program cycles; and
(d) Noise filter—pulses of less than 15 ns (typical) on the
WE
or CE inputs will not initiate a program cycle.
INPUT LEVELS:
While operating with a 3.3V ±10% power
supply, the address inputs and control inputs (OE
, CE and
WE
) may be driven from 0 to 5.5V without adversely affect-
ing the operation of the device. The I/O lines can only be
driven from 0 to 3.6 volts.
PRODUCT IDENTIFICATION:
The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product. In addition, users may wish to use the
software product identification mode to identify the part (i.e.
using the device code), and have the system software use
the appropriate sector size for program operations. In this
manner, the user can have a common board design for
256K to 4-megabit densities and, with each density’s sector
size in a memory map, have the system software apply the
appropriate sector size.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA
POLLING:
The AT29LV256 features DATA
polling
to indicate the end of a program cycle. During a program
cycle an attempted read of the last byte loaded will result in
the complement of the loaded data on I/O7. Once the pro-
gram cycle has been completed, true data is valid on all
outputs and the next cycle may begin. DATA
polling may
begin at any time during the program cycle.
TOGGLE BIT:
In addition to DATA
polling the
AT29LV256 provides another method for determining the
end of a program or erase cycle. During a program or erase
operation, successive attempts to read data from the
device will result in I/O6 toggling between one and zero.
Once the program cycle has completed, I/O6 will stop tog-
gling and valid data will be read. Examining the toggle bit
may begin at any time during a program cycle.
OPTIONAL CHIP ERASE MODE:
The entire device can
be erased by using a 6-byte software code. Please see
Software Chip Erase application note for details.
Absolute Maximum Ratings*
Temperature Under Bias................................ -55
°
C to +125
°
C
*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability.
Storage Temperature..................................... -65
°
C to +150
°
C
All Input Voltages (including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
Voltage on A9 (including NC Pins)
with Respect to Ground...................................-0.6V to +13.5V

AT29LV256-15TC

Mfr. #:
Manufacturer:
Description:
IC FLASH 256K PARALLEL 28TSOP
Lifecycle:
New from this manufacturer.
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