P6KE43CA-B

PROTECTION PRODUCTS
1
www.semtech.com
PROTECTION PRODUCTS - MicroClamp
®®
®®
®
uClamp2501T
Low Voltage μClamp
®®
®®
®
2.5V TVS Diode
Description
Features
Dimensions Schematic & PIN Configuration
Revision 10/21/2009
Applications
Mechanical Characteristics
Cellular Handsets & Accessories
Portable Instrumentation
Keypads, Side Keys, LCD Displays
Notebooks & Desktop Computers
mp3 Players
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (tp = 5/50ns)
Cable Discharge Event (CDE)
Ultra-small package (1.0 x 0.6 x 0.4mm)
Low leakage current: <10nA typical (VR=2.5V)
Low Operating voltage: 2.5V
Low capacitance
Protects one data line
Solid-state silicon-avalanche technology
SLP1006P2T package
Pb-Free, Halogen Free, RoHS/WEEE Compliant
Nominal Dimensions: 1.0 x 0.6 x 0.4 mm
Lead Finish: NiPdAu
Molding compound flammability rating: UL 94V-0
Marking : Marking code, cathode band
Packaging : Tape and Reel
SLP1006P2T (Bottom View)
Nominal Dimensions (mm)
0.65
0.40
0.60
1.0
The μClamp
®
series of Transient Voltage Suppressors
(TVS) are designed to replace multilayer varistors
(MLVs) in portable applications such as cell phones,
notebook computers, and PDAs. They offer superior
electrical characteristics such as lower clamping
voltage and no device degradation when compared to
MLVs. They are designed to protect sensitive semicon-
ductor components from damage or upset due to
electrostatic discharge (ESD), lightning, electrical fast
transients (EFT), and cable discharge events (CDE).
The μClamp
®
2501T is constructed using Semtech’s
proprietary EPD TVS process technology. The EPD
process provides low operating voltages with significant
reductions in leakage currents and capacitance over
silicon-avalanche diode processes. They feature a true
sub 5 volt operating voltage for superior protection
when compared to traditional pn junction devices.
The μClamp2501T is in a 2-pin SLP1006P2T package.
It measures 1.0 x 0.6 x 0.4mm. The leads are spaced
at a pitch of 0.65mm and are finished with lead-free
NiPdAu. Each device will protect one line operating at
2.5 volts. It gives the designer the flexibility to protect
single lines in applications where arrays are not practi-
cal. They may be used to meet the ESD immunity
requirements of IEC 61000-4-2, Level 4 (±15kV air,
±8kV contact discharge). The combination of small
size and high ESD surge capability makes them ideal
for use in portable applications such as cellular
phones, digital cameras, and MP3 players.
1
2
2© 2009 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
uClamp2501T
Absolute Maximum Rating
Electrical Characteristics (T=25
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I
TP
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BS
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V
MWR
V5.2=10.050.0Aμ
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C
I
PP
sμ02/8=pt,A1=5V
egatloVgnipmalCV
C
I
PP
sμ02/8=pt,A5=5.7V
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F
I
PP
sμ02/8=pt,A1=4.2V
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R
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3
© 2009 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
uClamp2501T
Non-Repetitive Peak Pulse Power vs. Pulse Time Clamping Voltage vs. Peak Pulse Current
Normalized Junction Capacitance vs. Reverse Voltage
Typical Insertion Loss (S21)
ESD Clamping (Pin 1 to 2)
(-8kV Contact per IEC 61000-4-2)
Note: Data is taken with a 10x attenuator
ESD Clamping (Pin 2 to 1)
(8kV Contact per IEC 61000-4-2)
Note: Data is taken with a 10x attenuator
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
00.511.522.53
Reverse Voltage - V
R
(V)
Cj(VR) / Cj(VR=0V)
f = 1 MHz
0
1
2
3
4
5
6
7
8
9
10
0123456
Peak Pulse Current - I
PP
(A)
Clamping Voltage - V
C
(V)
Waveform
Parameters:
tr = 8μs
td = 20μs
0.01
0.1
1
0.1 1 10 100 1000
Pulse Duration - tp (s)
Peak Pulse Power - P
PP
(kW)
1
2
3
4
START
.
030 MHz
3
STOP 000
.
000 000 MHz
CH1 S21 LOG 6 dB / REF 0 dB
1: -9.2069 dB
900 MHz
2: -12.958 dB
1.8 GHz
3: -11.689 dB
2.5 GHz
4: -3.0358 dB
227MHz
0 dB
-6 dB
-12 dB
-18 dB
-24 dB
-30 dB
-36 dB
1
GHz
100
MHz
3
GHz
10
MHz
1
MHz

P6KE43CA-B

Mfr. #:
Manufacturer:
Littelfuse
Description:
TVS Diodes / ESD Suppressors 36.8Vr 600W 10.1A 5% Bi-Directional
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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