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IXFK64N60P3

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK64N60P3
IXFX64N60P3
Fig. 11. Capacitance
1
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
Fig. 7. Input Admittance
0
10
20
30
40
50
60
70
80
90
3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
0 102030405060708090
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 300V
I
D
= 32A
I
G
= 10mA
© 2014 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_64N60P3(K8)03-16-11
IXFK64N60P3
IXFX64N60P3
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.2
P1-P3P4-P5

IXFK64N60P3

Mfr. #:
Buy IXFK64N60P3
Manufacturer:
Description:
IGBT Transistors MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET
Lifecycle:
New from this manufacturer.
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