IRLL014N
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
100
200
300
400
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Volta
e
V
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 3 6 9 12 15
Q , Total Gate Char
e
nC
G
V , Gate-to-Source Voltage (V)
GS
FOR TEST CIRCUIT
SEE FIGURE 9
I = 2.0A
V = 44V
V = 28V
D
DS
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
0.1
1
10
100
1 10 100
V , Drain-to-Source Volta
e
V
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Sin
le Pulse
10µs
100µs
1ms
10ms
A
J
