2010-2011 Microchip Technology Inc. Preliminary DS22237C-page 1
25A512
Device Selection Table
Features:
10 MHz max. Clock Speed
Byte and Page-level Write Operations
- 128-byte page
-5 ms max.
- No page or sector erase required
Low-Power CMOS Technology
- Max. Write Current: 5 mA at 3.0V, 10 MHz
- Read Current: 10 mA at 3.0V, 10 MHz
- Standby Current: 1A at 2.5V (Deep power-
down)
Electronic Signature for Device ID
Self-Timed Erase and Write cycles
- Page Erase (5 ms, typical)
- Sector Erase (10 ms/sector, typical)
- Bulk Erase (10 ms, typical)
Sector Write Protection (16K byte/sector)
- Protect none, 1/4, 1/2 or all of array
Built-In Write Protection
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
High Reliability
- Endurance: 1 Million erase/write cycles
- Data Retention: >200 years
- ESD Protection: 4000V
Temperature Ranges Supported;
- Industrial (I): -40°C to +85°C
Pb-free and RoHS Compliant
Pin Function Table
Description:
The Microchip Technology Inc. 25A512 is a 512 Kbit
serial EEPROM memory with byte-level and page-level
serial EEPROM functions. It also features Page, Sector
and Chip erase functions typically associated with
Flash-based products. These functions are not required
for byte or page write operations. The memory is
accessed via a simple Serial Peripheral Interface (SPI)
compatible serial bus. The bus signals required are a
clock input (SCK) plus separate data in (SI) and data
out (SO) lines. Access to the device is controlled by a
Chip Select (CS
) input.
Communication to the device can be paused via the
hold pin (HOLD
). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts.
The 25A512 is available in standard packages includ-
ing 8-lead SOIC and TSSOP packages. All packages
are Pb-free and RoHS compliant.
Package Types (not to scale)
Part Number VCC Range Page Size Temp. Ranges Packages
25A512 1.7-3.0V 128 Byte I SN, ST
Name Function
CS
Chip Select Input
SO Serial Data Output
WP
Write-Protect
V
SS Ground
SI Serial Data Input
SCK Serial Clock Input
HOLD Hold Input
V
CC Supply Voltage
25A512
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
SOIC/TSSOP
(SN, ST)
512 Kbit SPI Bus Serial EEPROM
25A512
DS22237C-page 2 Preliminary 2010-2011 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
VCC.............................................................................................................................................................................4.5V
All inputs and outputs w.r.t. V
SS ......................................................................................................... -0.3V to VCC +0.3V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias...............................................................................................................-40°C to 125°C
ESD protection on all pins..........................................................................................................................................4 kV
TABLE 1-1: DC CHARACTERISTICS
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
DC CHARACTERISTICS Industrial (I): TA = -40°C to +85°C VCC = 1.7V to 3.0V
Param.
No.
Sym. Characteristic Min. Max. Units Test Conditions
D001 V
IH1 High-level input
voltage
.7 VCC VCC +.3 V
D002 V
IL1 Low-level input
voltage
-0.3 0.3 VCC VVCC2.7V
D003 V
IL2 -0.3 0.2 VCC VVCC < 2.7V
D004 VOL Low-level output
voltage
—0.4VIOL = 2.1 mA, VCC 1.8V
D005 VOL —0.2VIOL = 1.0 mA, VCC < 1.8V
D006 V
OH High-level output
voltage
VCC -0.2 V IOH = -400 A
D007 I
LI Input leakage current ±1 ACS = VCC, VIN = VSS TO VCC
D008 ILO Output leakage
current
—±1ACS = VCC, VOUT = VSS TO VCC
D009 CINT Internal capacitance
(all inputs and
outputs)
—7pFT
A = 25°C, CLK = 1.0 MHz,
V
CC = 3.0V (Note)
D010 I
CC Read
Operating current
8
5
mA
mA
VCC = 3.0V; FCLK = 10.0 MHz;
SO = Open
V
CC = 2.5V; FCLK = 10.0 MHz;
SO = Open
D011 I
CC Write
6
5
mA
mA
VCC = 3.0V
V
CC = 2.5V
D012 I
CCS Standby current 10 ACS = VCC = 3.0V, Inputs tied to VCC or
V
SS, 85°C
D13 I
CCSPD Deep power-down
current
—1ACS = VCC = 2.5V, Inputs tied to VCC or
V
SS, 85°C
Note: This parameter is periodically sampled and not 100% tested.
2010-2011 Microchip Technology Inc. Preliminary DS22237C-page 3
25A512
TABLE 1-2: AC CHARACTERISTICS
AC CHARACTERISTICS Industrial (I): TA = -40°C to +85°C VCC = 1.7V to 3.0V
Param.
No.
Sym. Characteristic Min. Max. Units Conditions
1FCLK Clock frequency
10
2
MHz
MHz
2.0V VCC < 3.0V
1.7V V
CC < 2.0V
2T
CSS CS setup time 50
250
ns
ns
2.0V V
CC < 3.0V
1.7V V
CC < 2.0V
3T
CSH CS hold time 100
500
ns
ns
2.0V V
CC < 3.0V(Note 3)
1.7V V
CC < 2.0V(Note 3)
4T
CSD CS disable time 50 ns
5 Tsu Data setup time 10
50
ns
ns
2.0V V
CC < 3.0V
1.7V V
CC < 2.0V
6THD Data hold time 20
100
ns
ns
2.0V VCC < 3.0V
1.7V V
CC < 2.0V
7T
R CLK rise time 20 ns (Note 1)
8TF CLK fall time 20 ns (Note 1)
9T
HI Clock high time 50
250
ns
ns
2.0V VCC < 3.0V
1.7V V
CC < 2.0V
10 TLO Clock low time 50
250
ns
ns
2.0V VCC < 3.0V
1.7V V
CC < 2.0V
11 TCLD Clock delay time 50 ns
12 TCLE Clock enable time 50 ns
13 T
V Output valid from clock
low
50
250
ns
ns
2.0V VCC < 3.0V
1.7V V
CC < 2.0V
14 THO Output hold time 0 ns (Note 1)
15 T
DIS Output disable time
50
250
ns
ns
2.0V VCC < 3.0V(Note 1)
1.7V V
CC < 2.0V(Note 1)
16 T
HS HOLD setup time 20
100
ns
ns
2.0V V
CC < 3.0V
1.7V V
CC < 2.0V
17 T
HH HOLD hold time 20
100
ns
ns
2.0V VCC < 3.0V
1.7V V
CC < 2.0V
18 T
HZ HOLD low to output
High-Z
30
150
ns
ns
2.0V V
CC < 3.0V(Note 1)
1.7V V
CC < 2.0V(Note 1)
19 T
HV HOLD high to output
valid
30
150
ns
ns
2.0V V
CC < 3.0V
1.7V V
CC < 2.0V
20 T
REL CS High to Standby
mode
—100s
21 T
PD CS High to Deep power-
down
—100s
22 T
CE Chip erase cycle time 10 ms
23 T
SE Sector erase cycle time 10 ms
24 TWC Internal write cycle time 5 ms Page mode and Page Erase
Note 1: This parameter is periodically sampled and not 100% tested.
2: This parameter is not tested but established by characterization and qualification. For endurance
estimates in a specific application, please consult the Total Endurance™ Model which can be obtained
from Microchip’s web site at www.microchip.com.
3: Includes T
HI time.

25A512-I/P

Mfr. #:
Manufacturer:
Microchip Technology
Description:
EEPROM 512k 64K X 8 1.8V SER EE IND
Lifecycle:
New from this manufacturer.
Delivery:
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