MBR10H200CT C0G

MBR1035CT - MBR10200CT
CREAT BY ART
- Low power loss, high efficiency
- Guard ring for over-voltage protection
- High surge current capability
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 200 V
V
RMS
24 31 35 42 63 70 105 140 V
V
DC
35 45 50 60 90 100 150 200 V
I
F(AV)
A
I
RRM
A
dV/dt V/μs
R
θJC
°C/W
T
J
°C
T
STG
°C
Version: N1512
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
Taiwan Semiconductor
10A, 35V - 200V Dual Common Cathode Schottk
y
Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-220AB
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.88 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
MBR
1035
CT
MBR
1045
CT
MBR
1050
CT
MBR
1060
CT
MBR
1090
CT
MBR
10100
CT
MBR
10150
CT
MBR
10200
CT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
10.5
Maximum DC blocking voltage
Maximum average forward rectified current 10
Peak repetitive forward current
(Rated V
R
, Square Wave, 20KHz)
I
FRM
10 A
0.80
V0.57 0.65
0.90 0.95
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
120 A
Peak repetitive reverse surge current (Note 1)
0.1
0.70 0.80 0.85 0.88
0.98
0.67 0.85 0.88
Maximum instantaneous forward voltage (Note 2)
I
F
= 5 A, T
J
=25°C
I
F
= 5 A, T
J
=125°C
I
F
= 10 A, T
J
=25°C
I
F
= 10 A, T
J
=125°C
V
F
Operating junction temperature range - 55 to +150
0.75 0.78
mA
15 10
Voltage rate of change (Rated V
R
)
10000
0.75
Storage temperature range - 55 to +150
I
R
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
2 5
1.5 Typical thermal resistance
PART NO.
*: Optional available
PART NO.
(T
A
=25°C unless otherwise noted)
Version: N1512
AEC-Q101 qualified
Green compound
MBR1060CTHC0G MBR1060CT H C0 G
Note 1: "xx" defines voltage from 35V (MBR1035CT) to 200V (MBR10200CT)
EXAMPLE
EXAMPLE
PART NO.
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
DESCRIPTION
MBR10xxCT
(Note 1)
H C0 G TO-220AB 50 / Tube
MBR1035CT - MBR10200CT
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
ORDERING INFORMATION
PART NO.
SUFFIX
PACKING CODE
PACKING CODE
SUFFIX
(*)
PACKAGE PACKING
0
2
4
6
8
10
12
0 50 100 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (
°
C)
FIG.1 FORWARD CURRENT DERATING CURVE
Resistive or
inductive load
with heat sink
0
30
60
90
120
150
180
1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms single half sine wave
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
T
J
=75°C
T
J
=125°C
T
J
=25°C
0.1
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
Pulse width=300μs
1% duty cycle
MBR1050CT-1060CT
MBR1035CT-1045CT
MBR1090CT-10100CT
MBR10150-10200CT
Min Max Min Max
A - 10.50 - 0.413
B 2.62 3.44 0.103 0.135
C 2.80 4.20 0.110 0.165
D 0.68 0.94 0.027 0.037
E 3.54 4.00 0.139 0.157
F 14.60 16.00 0.575 0.630
G 13.19 14.79 0.519 0.582
H 2.41 2.67 0.095 0.105
I 4.42 4.76 0.174 0.187
J 1.14 1.40 0.045 0.055
K 5.84 6.86 0.230 0.270
L 2.20 2.80 0.087 0.110
M 0.35 0.64 0.014 0.025
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Version: N1512
MARKING DIAGRAM
MBR1035CT - MBR10200CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM.
Unit (mm) Unit (inch)
TO-220AB
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (°C/W)
T-PULSE DURATION. (s)
FIG. 6 TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG

MBR10H200CT C0G

Mfr. #:
Manufacturer:
Taiwan Semiconductor
Description:
Schottky Diodes & Rectifiers 10A 200V Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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