IXFV12N80PS Datasheet IXFV12N80P, IXFV12N80PS, IXFQ12N80P | P1-P3

G = Gate D = Drain

S = Source TAB = Drain

DS99476E(07/06)

PolarHV

TM

HiPerFET

Power MOSFET

IXFH12N80P

IXFQ12N80P

IXFV12N80P

IXFV12N80PS

N-Channel Enhancement Mode

Features

z

International standard packages

z

Unclamped Inductive Switching (UIS)

rated

z

Low package inductance

- easy to drive and to protect

Advantages

z

Easy to mount

z

Space savings

z

High power density

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 μA 800 V

V

GS(th)

V

DS

= V

GS

, I

D

= 2.5 mA 3.0 5.5 V

I

GSS

V

GS

= ±30 V, V

DS

= 0 V ±100 nA

I

DSS

V

DS

= V

DSS

25 μA

V

GS

= 0 V T

J

= 125°C 250 μA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

, Note 1 0.85 Ω

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 800 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 800 V

V

GS

Continuous ±30 V

V

GSM

Tranisent ±40 V

I

D25

T

C

= 25°C12A

I

DM

T

C

= 25°C, pulse width limited by T

JM

36 A

I

AR

T

C

= 25°C6A

E

AR

T

C

= 25°C30mJ

E

AS

T

C

= 25°C 0.8 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/μs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150°C, R

G

= 5 Ω

P

D

T

C

= 25°C 360 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

T

SOLD

Plastic body for 10 s 260 °C

M

d

Mounting torque (TO-247, TO-3P) 1.13/10 Nm/lb.in.

F

C

Mounting force (PLUS220,PLUS220SMD) 11..65/2.5..15 N/lb.

Weight PLUS220 & PLUS220SMD 4.0 g

T0-3P 5.5 g

TO-247 6.0 g

TO-247 (IXFH)

D (TAB)

V

DSS

= 800 V

I

D25

= 12 A

R

DS(on)

≤≤

≤ 0.85

ΩΩ

Ω

t

rr

≤≤

≤ 250 ns

G

S

D

PLUS220 (IXFV)

D (TAB)

PLUS220 SMD (IXFV...S)

G

S

D (TAB)

TO-3P (IXFQ)

G

D

S

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH12N80P IXFQ12N80P

IXFV12N80P IXFV12N80PS

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, Note 1 8 14 S

C

iss

2800 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 210 pF

C

rss

19 pF

t

d(on)

23 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= I

D25

26 ns

t

d(off)

R

G

= 5 Ω (External) 70 ns

t

f

25 ns

Q

g(on)

51 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

13 nC

Q

gd

19 nC

R

thJC

0.35 °C/W

R

thCS

(TO-247 & TO-3P) 0.21 °C/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 12 A

I

SM

Repetitive 36 A

V

SD

I

F

= I

S

, V

GS

= 0 V, Note 1 1.5 V

t

rr

I

S

= 12 A, V

GS

= 0 V 200 250 ns

Q

rm

-di/dt = 100 A/μs, V

R

= 100 V 0.8 μC

I

rm

4 Α

Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

TO-247 (IXFH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

TO-3P (IXFQ) Outline

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

4

8

12

16

20

24

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5V

6V

Fig. 3. Output Characteristics

@ 125

º

C

0

2

4

6

8

10

12

0 4 8 12162024

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 1. Output Characteristics

@ 25

º

C

0

2

4

6

8

10

12

024681012

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5V

6V

Fig. 4. R

DS(on

)

Normalized to 0.5 I

D25

Value vs. Junction Temperature

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 12A

I

D

= 6A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Temperature

0

2

4

6

8

10

12

14

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 5. R

DS(on)

Norm alize d to

0.5 I

D25

Value vs. I

D

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

024681012141618202224

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 125

º

C

T

J

= 25

º

C

V

GS

= 10V

IXFH12N80P IXFQ12N80P

IXFV12N80P IXFV12N80PS

IXFV12N80PS

IXFV12N80PS

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