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VS-8EWH02FNTRR-M3

P1-P3P4-P6P7-P7
VS-8EWH02FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 05-Oct-16
1
Document Number: 93259
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 8 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Q
rr
and soft
recovery
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-252AA (D-PAK)
I
F(AV)
8 A
V
R
200 V
V
F
at I
F
0.75 V
t
rr
(typ.) 23 ns
T
J
max. 175 °C
Diode variation Single die
2, 4
3
Anode
1
N/C
TO-252AA (D-PAK)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current I
F(AV)
T
C
= 156 °C 8
ANon-repetitive peak surge current I
FSM
T
J
= 25 °C 140
Peak repetitive forward current I
FM
T
C
= 156 °C, f = 20 kHz, d = 50 % 16
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 200 - -
V
Forward voltage V
F
I
F
= 8 A - 0.91 0.97
I
F
= 8 A, T
J
= 150 °C - 0.75 0.85
Reverse leakage current I
R
V
R
= V
R
rated - - 5
μA
T
J
= 150 °C, V
R
= V
R
rated - 6 60
Junction capacitance C
T
V
R
= 600 V - 22 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
VS-8EWH02FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 05-Oct-16
2
Document Number: 93259
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 23 27
ns
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 27 -
T
J
= 25 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
-24-
T
J
= 125 °C - 33 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.3 -
A
T
J
= 125 °C - 4.3 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 27 -
nC
T
J
= 125 °C - 70 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case per leg
R
thJC
-1.72.5°C/W
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK (TO-252AA) 8EWH02FN
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
0.2 0.4 0.8 1.20.6 1.0 1.4 1.6 1.8
0.1
1
10
100
T
J
= 125 °C
T
J
= 25 °C
T
J
= 175 °C
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
50 100 150 200
0.0001
0.001
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
VS-8EWH02FN-M3
www.vishay.com
Vishay Semiconductors
Revision: 05-Oct-16
3
Document Number: 93259
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0 50 100 150 200
10
100
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal resistance)
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
86421210
14
0
160
180
120
140
150
170
130
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
810642
12
0
8
10
12
0
4
6
2
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
RMS limit
DC
P1-P3P4-P6P7-P7

VS-8EWH02FNTRR-M3

Mfr. #:
Buy VS-8EWH02FNTRR-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers Freds - D-PAK-e3
Lifecycle:
New from this manufacturer.
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