APTGF350DA60G
APTGF350DA60G – Rev 3 October, 2012
www.microsemi.com
1-7
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Breakdown Voltage 600 V
T
c
= 25°C
430
I
C
Continuous Collector Current
T
c
= 80°C
350
I
CM
Pulsed Collector Current T
c
= 25°C 1225
A
V
GE
Gate – Emitter Voltage ±20 V
P
D
Maximum Power Dissipation
T
c
= 25°C
1562 W
RBSOA Reverse Bias Safe Operating Area T
j
= 150°C 800A @ 600V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G2
E2
Q2
0/VBUS
OUT
CR1
VBUS
V
CES
= 600V
I
C
= 350A @ Tc = 80°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
Non Punch Through (NPT) Fast IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
C
of V
CEsat
Low profile
RoHS compliant
Boost chopper
PT IGBT Power Module