OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SI4164DY-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 68870
S-82015-Rev. A, 01-Sep-08
Vishay Siliconix
Si4164DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
I
D
=5mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.000
0.005
0.010
0.015
0.020
0.025
012345678 910
T
J
=25 °C
T
J
= 125 °C
I
D
=15A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
40
80
120
160
200
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
100
1
00101110.0
0.01
10
-DrainCurrent (A)I
D
0.1
0.1
1ms
T
C
= 25 °C
Single Pulse
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
10 s
Limited byR
DS(on)*
1 s
Document Number: 68870
S-82015-Rev. A, 01-Sep-08
www.vishay.com
5
Vishay Siliconix
Si4164DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
7
14
21
28
35
0 25 50 75 100 125 150
I
D
-DrainCurrent (A)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
1.5
3.0
4.5
6.0
7.5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0 255075100125150
T
A
-Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 68870
S-82015-Rev. A, 01-Sep-08
Vishay Siliconix
Si4164DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68870.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
0.02
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
P1-P3P4-P6P7-P9

SI4164DY-T1-GE3

Mfr. #:
Buy SI4164DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs SO-8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet