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MUBW10-06A7

P1-P3P4-P6P7-P8
7 - 8
© 2002 IXYS All rights reserved
B4
Fig. 13 Typ. turn on energy and switching Fig. 14 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 15 Typ. turn on energy and switching Fig.16 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 17 Reverse biased safe operating area Fig. 18 Typ. transient thermal impedance
RBSOA
Output Inverter T1 - T6 / D1 - D6
MUBW 10-06 A7
01020
0.0
0.5
1.0
1.5
0
20
40
60
01020
0.00
0.25
0.50
0.75
1.00
0
100
200
300
400
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
0 20 40 60 80 100 120 140
0.0
0.2
0.4
0.6
0
100
200
300
0 20 40 60 80 100 120 140
0.00
0.25
0.50
0.75
0
15
30
45
single pulse
V
CE
= 300V
V
GE
= ±15V
R
G
= 82
Ω
T
VJ
= 125°C
MUBW1006A7
V
CE
= 300V
V
GE
= ±15V
I
C
= 10A
T
VJ
= 125°C
0 100 200 300 400 500 600 700
0
5
10
15
20
25
R
G
= 82
Ω
T
VJ
= 125°C
V
CE
= 300V
V
GE
= ±15V
R
G
= 82Ω
T
VJ
= 125°C
E
on
V
CE
= 300V
V
GE
= ±15V
I
C
= 10A
T
VJ
= 125°C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
V
A
mJ
ns
ns
mJ
diode
IGBT
8 - 8
© 2002 IXYS All rights reserved
B4
Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of
free wheeling diode
Fig. 21 Typ. turn off energy and switching Fig. 22 Typ. turn off energy and switching
times versus collector current times versus gate resistor
Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus
temperature
012345
0
5
10
15
20
25
30
V
GE
= 15V
V
V
CE
A
I
C
T
J
= 25°C
T
J
= 125°C
0123
0
5
10
15
20
V
V
F
I
F
T
J
= 25°C
T
J
= 125°C
A
0 5 10 15 20 25
0.00
0.25
0.50
0.75
0
100
200
300
V
CE
= 300V
V
GE
= ±15V
R
G
= 82Ω
T
VJ
= 125°C
E
off
t
d(off)
t
f
I
C
A
E
off
t
mJ
ns
0 20 40 60 80 100 120 140
0.0
0.1
0.2
0.3
0.4
0
100
200
300
400
V
CE
= 300V
V
GE
= ±15V
I
C
= 10A
T
VJ
= 125°C
E
off
t
d(off)
t
f
Ω
E
off
t
ns
mJ
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
10
single pulse
t
s
K/W
Z
thJC
IGBT
diode
0 25 50 75 100 125 150
100
1000
10000
MUBW1006A7
T
°C
Ω
R
R
G
Brake Chopper T7 / D7
Temperature Sensor NTC
MUBW 10-06 A7
P1-P3P4-P6P7-P8

MUBW10-06A7

Mfr. #:
Buy MUBW10-06A7
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 10 Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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