Document Number: 83652 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.6, 04-Mar-11 3
ILD615, ILQ615
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Vishay Semiconductors
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature
(1)
2 mm distance from case bottom T
sld
260 °C
Package power dissipation ILD615 400 mW
Derate linearly from 25 °C 5.33 mW/°C
Package power dissipation ILQ615 500 mW
Derate linearly from 25 °C 6.67 mW/°C
Isolation test voltage t = 1 s V
ISO
5300 V
RMS
Isolation voltage V
IORM
890 V
P
Total power dissipation P
tot
250 mW
Creepage distance 7mm
Clearance distance 7mm
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
ELECTRICAL CHARACTERISTCS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
1 1.15 1.3 V
Breakdown voltage I
R
= 10 μA V
BR
630 V
Reverse current V
R
= 6 V I
R
0.01 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
O
25 pF
Thermal resistance, junction to lead R
THJL
750 K/W
OUTPUT
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
6.8 pF
Collector emitter leakage current, -1, -2 V
CE
= 10 V I
CEO
250nA
Collector emitter leakage current, -3, -4 V
CE
= 10 V I
CEO
5 100 nA
Collector emitter breakdown voltage I
CE
= 0.5 mA BV
CEO
70 V
Emitter collector breakdown voltage I
E
= 0.1 mA BV
ECO
7V
Thermal resistance, junction to lead R
THJL
500 K/W
PACKAGE TRANSFER CHARACTERISTICS
Channel/channel CTR match I
F
= 10 mA, V
CE
= 5 V CTRX/CTRY 1 to 1 2 to 1
COUPLER
Capacitance (input to output) V
IO
= 0 V, f = 1 MHz C
IO
0.8 pF
Insulation resistance V
IO
= 500 V, T
A
= 25 °C R
S
10
12
10
14
Channel to channel isolation 500 VAC
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
