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MGA-30216-TR2G

P1-P3P4-P6P7-P9P10-P12P13-P14
MGA-30216
1.7-2.7GHz
½ Watt High Linearity Ampli er
Data Sheet
Description
Avago Technologies’ MGA-30216 is a high linearity ½ Watt
PA with good OIP3 performance and exceptionally good
PAE at p1dB gain compression point, achieved through
the use of Avago Technologies’ proprietary 0.25um GaAs
Enhancement-mode pHEMT process.
The device required simple matching components to
achieve wide bandwidth performance since it has a built
in input prematch.
The adjustable temperature compensated internal bias
circuit allowed the device to be operated at either class A
or class AB operation
The MGA-30216 is housed inside a standard 16 pin QFN
3X3 package.
Applications
Class A driver ampli er for GSM/PCS/W-CDMA/WiMAX
Base Stations.
General purpose gain block.
Component Image
16 pin QFN 3X3 package
Notes:
Package marking provides orientation and identi cation
“30216” = Device Part Number
“YYWW” = Year and Work Week of manufacture
“XXXX” = Last 4 digit of Lot number
Features
High linearity and P1dB
Unconditionally Stable across load condition
Built in adjustable temperature compensated internal
bias circuitry
With prematch - required simple matching
GaAs E-pHEMT Technology
[1]
Standard QFN 3X3 package
5V supply
Excellent uniformity in product speci cations
Tape-and-Reel packaging option available
MSL-1 and Lead-free
High MTTF for base station application
Speci cations
2GHz; 5V, 206mA (typ)
14.2 dB Gain
45.3 dBm Output IP3
29 dBm Output Power at 1dB gain compression
48.9% PAE at P1dB
2.8 dB Noise Figure
Notes:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
1 Vm
2 Vbias
3 RF in
4 NC
RFgnd 16
Vg 15
GND 14
NC 13
NC 12
VDD/RFout 11
VDD/RFout 10
NC 9
5 NC
6 NC
7 GND
8 NC
30216
YYWW
XXXX
TOP VIEW
BOTTOM VIEW
GND
2
Absolute Maximum Rating
[1]
T
A
=25
o
C
Symbol Parameter Units Absolute Max.
V
dd,max
Device Voltage, RF output to ground V 5.5
I
ds,max
Device Drain Current mA 400
V
ctrl,max
Control Voltage V 5.5
P
in,max
CW RF Input Power dBm 22
P
diss
Total Power Dissipation
[2]
W 2.2
T
j, max
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to 150
Thermal Resistance
[3]
jc
= 36C/W (Vdd=5, Ids=200mA, Tc=85ºC)
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. This is limited by maximum Vdd and Ids. Derate 28mW/ °C for Tc>70.8 °C.
3. Thermal resistance measured using Infra-Red measurement technique.
Electrical Speci cations
[4]
T
A
= 25 °C, Vdd =5V, Vctrl =5V, RF performance at 2.0 GHz, measured on demo board (see Fig. 7) unless otherwise speci ed.
Symbol Parameter and Test Condition Units Min. Typ. Max.
Ids Quiescent current mA 155 206 255
Ictrl Vctrl current mA - 7 -
Gain Gain dB 13 14.0 16
OIP3
[5]
Output Third Order Intercept Point dBm 41 45.3 -
OP1dB Output Power at 1dB Gain Compression dBm 27 29 -
PAE Power Added E ciency % - 48.9 -
NF Noise Figure dB - 2.8 -
S11 Input Return Loss, 50Ω source dB - -18 -
S22 Output Return Loss, 50Ω load dB - -22 -
S12 Reverse Isolation dB - -21 -
Notes:
4. Measurements at 2.0GHz obtained using demo board described in Figure 6 and 7.
5. 2.0GHz OIP3 test condition: F
RF1
- F
RF2
= 10MHz with input power of -5dBm per tone measured at worse side band
6. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and
application note (if applicable) for more details.
3
Figure 5. Gain at 2GHz; LSL=13dB, nominal =14.2dB, USL=16dB
CPK = 4.16
Stdev = 0.1
Notes:
1. Distribution data sample size is 500 samples taken from 4 di erent wafer lots and 6 di erent wafers. Future wafers allocated to this product may
have nominal values anywhere between the upper and lower limits.
2. Measurements were made on a characterization test board, which represents a trade-o between optimal OIP3, gain, P1dB and PAE. Circuit trace
losses have not been de-embedded from measurements above.
Product Consistency Distribution Charts
[1, 2]
Figure 3. P1dB at 2GHz; LSL=27dBm, nominal =29dBm
Figure 1.Ids at 2GHz; LSL=155mA, nominal =206mA, USL=255mA.
CPK = 1.71
Stdev = 9.56
CPK = 2.16
Stdev = 0.67
CPK = 27.5
Stdev = 0.026
Stdev = 0.26
Figure 2. OIP3 at 2GHz; LSL=41dBm, nominal=45.3dBm
Figure 4. PAE@P1dB 2GHz; nominal=48.9%
P1-P3P4-P6P7-P9P10-P12P13-P14

MGA-30216-TR2G

Mfr. #:
Buy MGA-30216-TR2G
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Meranti 0.5W 2GHz
Lifecycle:
New from this manufacturer.
Delivery:
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