NTMD5836NLR2G Datasheet NTMD5836NLR2G | P4-P6

NTMD5836NL

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4

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise specified)

Parameter UnitMaxTypMinChTest ConditionSymbol

CHARGES, CAPACITANCES & GATE RESISTANCE

Total Gate Charge Q

G(TOT)

V

GS

= 10V, V

DS

= 20V, I

D

= 10A Ch 1 36 50

nC

V

GS

= 10 V, V

DS

= 20 V, I

D

= 7 A Ch 2 16

V

GS

= 4.5 V, V

DS

= 20 V, CH1:

I

D

= 10 A, CH2: I

D

= 7 A

Ch 1 15 23

Ch 2 8.5 11

Threshold Gate Charge Q

G(TH)

Ch 1 2.4

Ch 2 1.0

Gate−to−Source Charge Q

GS

Ch 1 6.9

Ch 2 2.8

Gate−to−Drain Charge Q

GD

Ch 1 7.2

Ch 2 4.0

Plateau Voltage V

GP

Ch 1 3.2

V

Ch 2 3.3

Gate Resistance R

G

Ch 1 1.2 W

Ch 2 2.1

SWITCHING CHARACTERISTICS (Note 10)

Turn−On Delay Time t

d(ON)

V

GS

= 4.5 V, V

DD

= 20 V, CH1:

I

D

= 10 A, CH2: I

D

= 7 A, R

G

=

2.5 W

Ch 1 16

ns

Ch 2 11.5

Rise Time t

r

Ch 1 22

Ch 2 14

Turn−Off Delay Time t

d(OFF)

Ch 1 26

Ch 2 15.5

Fall Time t

f

Ch 1 8.5

Ch 2 3.5

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

V

GS

= 0 V,

CH1: I

D

=

10 A, CH2: I

D

= 7 A

T

J

= 25°C

Ch 1 0.9 1.2

V

Ch 2 0.85 1.2

T

J

= 125°C

Ch 1 0.65

Ch 2 0.73

Reverse Recovery Time t

RR

V

GS

= 0 V, dISD/dt = 100 A/ms,

CH1: I

D

= 10 A, CH2: I

D

= 7 A

Ch 1 27

ns

Ch 2 17

Charge Time T

a

Ch 1 14

Ch 2 11

Discharge Time T

b

Ch 1 13

Ch 2 6.0

Reverse Recovery Charge Q

RR

Ch 1 19

nC

Ch 2 9.0

9. Pulse Test: pulse width v 300 ms, duty cycle v 2%

10.Switching characteristics are independent of operating junction temperatures

NTMD5836NL

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5

TYPICAL PERFORMANCE CURVES

0

10

20

30

40

50

60

70

012345

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

I

D,

DRAIN CURRENT (A)

Figure 1. On−Region Characteristics −

Channel 1

T

J

= 25°C

3.1 V

6.5 V

3.9 V

4.5 V

V

GS

= 2.5 V

3.5 V

10V

5.5 V

8.5 V

0

10

20

30

40

50

60

70

2345

V

GS

, GATE−TO−SOURCE VOLTAGE (V)

I

D,

DRAIN CURRENT (A)

Figure 2. Transfer Characteristics − Channel 1

T

J

= 125°C

T

J

= −55°C

T

J

= 25°C

V

DS

≥ 20 V

0.01

0.015

0.02

0.025

0.03

0.035

2345678910

Figure 3. On−Resistance vs. Gate−to−Source

Voltage − Channel 1

V

GS

, GATE−TO−SOURCE VOLTAGE (V)

R

DS(on),

DRAIN−TO−SOURCE RESISTANCE (W)

T

J

= 25°C

I

D

= 10 A

0.005

0.01

0.015

0.02

2 6 10 14 18

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage − Channel 1

R

DS(on),

DRAIN−TO−SOURCE RESISTANCE (W)

V

GS

= 10 V

V

GS

= 4.5 V

I

D,

DRAIN CURRENT (A)

T

J

= 25°C

0.8

1

1.2

1.4

1.6

−50 −25 0 25 50 75 100 125 150

Figure 5. On−Resistance Variation with

Temperature − Channel 1

T

J

, JUNCTION TEMPERATURE (°C)

I

D

= 10 A

V

GS

= 4.5 V

R

DS(on),

DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

1000

10000

100000

10 20 30 40

Figure 6. Drain−to−Source Leakage Current

vs. Voltage − Channel 1

V

DS

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

V

GS

= 0 V

I

DSS

, LEAKAGE (nA)

T

J

= 150°C

T

J

= 125°C

NTMD5836NL

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6

TYPICAL PERFORMANCE CURVES

0

500

1000

1500

2000

2500

3000

010203040

Figure 7. Capacitance Variation − Channel 1

DRAIN−TO−SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

T

J

= 25°C

C

iss

C

oss

C

rss

V

GS

= 0 V

0

2

4

6

8

10

0 5 10 15 20 25 30 35 40

Figure 8. Gate−To−Source and

Drain−To−Source Voltage vs. Total Charge −

Channel 1

Q

G

, TOTAL GATE CHARGE (nC)

V

GS

= 20 V

I

D

= 10 A

T

J

= 25°C

Q

GS

Q

GD

Q

T

V

GS

, GATE−TO−SOURCE (V)

V

DS

, DRAIN−TO−SOURCE (V)

10

100

1000

1 10 100

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance − Channel 1

R

G

, GATE RESISTANCE (W)

t,

TIME (

ns

)

V

DD

= 20 V

I

D

= 10 A

V

GS

= 4.5 V

t

r

t

d(on)

t

f

t

d(off)

0

5

10

15

20

0.4 0.5 0.6 0.7 0.8 0.9 1

V

SD

, SOURCE−TO−DRAIN VOLTAGE (V)

I

S

, SOURCE CURRENT (A)

V

GS

= 0 V

T

J

= 25°C

Figure 10. Diode Forward Voltage vs. Current

− Channel 1

0.001

0.01

0.1

1

10

100

0.1 1 10 100

Figure 11. Maximum Rated Forward Biased

Safe Operating Area − Channel 1

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

R

DS(on)

LIMIT

THERMAL LIMIT

PACKAGE LIMIT

V

GS

= 20 V

SINGLE PULSE

T

C

= 25°C

dc

10 ms

1 ms

100 ms

1 ms

0

20

40

60

80

25 50 75 100 125 150

T

J

, STARTING JUNCTION TEMPERATURE (°C)

EAS, SINGLE PULSE DRAIN−TO−

SOURCE AVALANCHE ENERGY (mJ)

I

D

= 39 A

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature − Channel 1

NTMD5836NLR2G

NTMD5836NLR2G

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