1999 May 11 3
NXP Semiconductors Product data sheet
Low-leakage double diode BAW156
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
V
F
forward voltage see Fig.3
I
F
= 1 mA − 900 mV
I
F
= 10 mA − 1 000 mV
I
F
= 50 mA − 1 100 mV
I
F
= 150 mA − 1 250 mV
I
R
reverse current see Fig.5
V
R
= 75 V 0.003 5 nA
V
R
= 75 V; T
j
= 150 °C 3 80 nA
C
d
diode capacitance f = 1 MHz; V
R
= 0; see Fig.6 3 − pF
t
rr
reverse recovery time when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100 Ω;
measured at I
R
= 1 mA; see Fig.7
0.8 3 μs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-tp
thermal resistance from junction to tie-point 360 K/W
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
