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BAS416,115

P1-P3P4-P6P7-P9
2004 Jan 26 3
NXP Semiconductors Product data sheet
Low-leakage diode BAS416
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD323 (SC-76) standard mounting conditions.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage see Fig.3
I
F
= 1 mA − 0.9 V
I
F
= 10 mA − 1 V
I
F
= 50 mA − 1.1 V
I
F
= 150 mA − 1.25 V
I
R
reverse current see Fig.5
V
R
= 75 V 0.003 5 nA
V
R
= 75 V; T
j
= 150 °C 3 80 nA
C
d
diode capacitance V
R
= 0; f = 1 MHz; see Fig.6 2 − pF
t
rr
reverse recovery time when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100 Ω;
measured at I
R
= 1 mA; see Fig.7
0.8 3 µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 450 K/W
2004 Jan 26 4
NXP Semiconductors Product data sheet
Low-leakage diode BAS416
GRAPHICAL DATA
handbook, halfpage
0
I
F
(mA)
100 200
300
0
100
200
T
amb
(°C)
MHC323
Fig.2 Maximum permissible continuous
forward current as a function of
ambient temperature.
Device mounted on an FR4 printed-circuit board.
handbook, halfpage
0 1.6
300
0
100
200
MLB752 - 1
0.8 1.20.4
I
F
(mA)
V (V)
F
(1) (2) (3)
(1) T
j
= 150 °C; typical values.
(2) T
j
= 25 °C; typical values.
(3) T
j
= 25 °C; maximum values.
Fig.3 Forward current as a function of
forward voltage.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25 °C prior to surge.
handbook, full pagewidth
MBG704
10
t
p
(µs)
1
I
FSM
(A)
10
2
10
−1
10
4
10
2
10
3
10
1
2004 Jan 26 5
NXP Semiconductors Product data sheet
Low-leakage diode BAS416
handbook, halfpage
10
2
10
3
150 200
500
MLB754
100
10
1
10
1
10
2
I
R
(nA)
T ( C)
o
j
(1)
(2)
Fig.5 Reverse current as a function of
junction temperature.
V
R
= 75 V.
(1) Maximum values.
(2) Typical values.
handbook, halfpage
01020155
2
0
1
MBG526
V
R
(V)
C
d
(pF)
Fig.6 Diode capacitance as a function
of reverse voltage; typical values.
f = 1 MHz; T
j
= 25 °C.
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1) I
R
= 1 mA.
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time t
r
= 0.35 ns.
handbook, full pagewidth
t
rr
(1)
I
F
t
output signal
t
r
t
t
p
10%
90%
V
R
input signal
V = V I x R
RF S
R = 50
S
Ω
I
F
D.U.T.
R = 50
i
Ω
SAMPLING
OSCILLOSCOPE
MGA881
P1-P3P4-P6P7-P9

BAS416,115

Mfr. #:
Buy BAS416,115
Manufacturer:
Nexperia
Description:
Diodes - General Purpose, Power, Switching DIODE LOW LEAKAGE TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
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