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BAS416Z
P1-P3
P4-P6
P7-P9
2004 Jan 26
3
NXP Semico
nductors
Product dat
a sheet
Low-leakage diode
BAS416
CHARACTERISTICS
T
amb
=
25
°
C unless otherwise spec
ified.
THERMAL CHARACTE
RISTICS
Note
1.
Refer to SOD3
23 (SC-76) st
andard mounting
conditions.
SYMBOL
PARAMETER
CONDITIONS
T
YP.
MAX.
UNIT
V
F
forward voltage
see
Fig.3
I
F
= 1
mA
−
0.9
V
I
F
=
10
mA
−
1
V
I
F
=
50
mA
−
1.1
V
I
F
=
150
mA
−
1.25
V
I
R
reverse current
see
Fig.5
V
R
=
75
V
0.003
5
nA
V
R
=
75
V;
T
j
=
150
°
C
3
80
nA
C
d
diode cap
acit
ance
V
R
=
0; f
= 1
MHz; see
Fig.6
2
−
pF
t
rr
reverse recove
ry time
when switch
ed from I
F
=
10
mA to
I
R
=
10
mA; R
L
=
100
Ω
;
measured at I
R
= 1
mA; see
Fig.7
0.8
3
µ
s
SYMBOL
PARAMETER
CONDITIO
NS
VA
L
U
E
UNIT
R
th(j-a)
thermal resist
ance from
junction to ambient
note
1
450
K/W
2004 Jan 26
4
NXP Semico
nductors
Product dat
a sheet
Low-leakage diode
BAS416
GRAPHICAL DAT
A
handbook, halfpage
0
I
F
(mA)
100
200
300
0
100
200
T
amb
(
°
C)
MHC323
Fig.2
Maximum permissible continu
ous
forward curren
t as a function of
ambient temperat
ure.
Device mounted on a
n FR4 printed-circuit board
.
handbook, halfpage
0
1.6
300
0
100
200
MLB752 - 1
0.8
1.2
0.4
I
F
(mA)
V (V)
F
(1)
(2)
(3)
(1)
T
j
= 150
°
C; typical values.
(2)
T
j
= 25
°
C; typical values.
(3)
T
j
= 25
°
C; maximum values.
Fig.3
Forwar
d current as a functi
on of
forward voltage.
Fig.4 Maximum permissible non-r
epetitive peak fo
rwar
d current as a function
of pulse duration.
Based on square wave
currents.
T
j
= 25
°
C prior to surge.
handbook, full pagewidth
MBG704
10
t
p
(
µ
s)
1
I
FSM
(A)
10
2
10
−
1
10
4
10
2
10
3
10
1
2004 Jan 26
5
NXP Semico
nductors
Product dat
a sheet
Low-leakage diode
BAS416
handbook, halfpage
10
2
10
3
150
200
50
0
MLB754
100
10
1
10
1
10
2
I
R
(nA)
T ( C)
o
j
(1)
(2)
Fig.5
Reverse current as a function of
junction temper
ature.
V
R
= 75 V.
(1)
Maximum values.
(2)
Typical values.
handbook, halfpage
01
0
2
0
15
5
2
0
1
MBG526
V
R
(V)
C
d
(pF)
Fig.6
Diode capacitance
as a function
of reverse voltage; typical values.
f = 1 MHz;
T
j
= 25
°
C.
Fig.7 Reverse reco
very voltage
test circuit and waveforms
.
(1) I
R
= 1 mA.
Input signal: reverse pulse rise
time t
r
= 0.6 ns; reve
rse voltag
e pulse dura
tion t
p
= 100 ns; duty f
actor
δ
= 0.05;
Oscilloscope: rise time t
r
= 0.35 ns.
handbook, full pagewidth
t
rr
(1)
I
F
t
output signal
t
r
t
t
p
10%
90%
V
R
input signal
V = V I x R
RF
S
R = 50
S
Ω
I
F
D.U.T.
R = 50
i
Ω
SAMPLING
OSCILLOSCOPE
MGA881
P1-P3
P4-P6
P7-P9
BAS416Z
Mfr. #:
Buy BAS416Z
Manufacturer:
Nexperia
Description:
Diodes - General Purpose, Power, Switching BAS416/SOD2/MULTI- REEL 7" Q1/T
Lifecycle:
New from this manufacturer.
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