IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTN660N04T4
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
SOT-227B (IXTN) Outline
(M4 screws (4x) supplied)
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 110 180 S
C
iss
44.0 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 6.5 nF
C
rss
3.5 nF
R
GI
Gate Input Resistance 2.5
t
d(on)
40 ns
t
r
430 ns
t
d(off)
386 ns
t
f
260 ns
Q
g(on)
860 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
DSS
240 nC
Q
gd
290 nC
R
thJC
0.144C/W
R
thCS
0.05 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 660 A
I
SM
Repetitive, Pulse Width Limited by T
JM
2640 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.4 V
t
rr
60 ns
I
RM
2.1 A
Q
RM
63 nC
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
DSS
R
G
= 1 (External)
I
F
= 150A, V
GS
= 0V
-di/dt = 100A/s
V
R
= 30V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
