0 25 50 75 100 125 150
T
a
[°C]
T
C
[°C]
t [ms]
t [s]
0.001 0.01 0.1 1
0
2000
4000
6000
011
10
4
10
5
0 25 50 75 100 125 150
0
100
200
300
I
TSM
[A]
I
TAVM
[A]
0 100 200 300
0
100
200
300
400
P
tot
[W]
I
TAVM
[A]
0 25 50 75 100 125 1500 200 400 600
0
400
800
1200
1600
2000
I
2
dt
[A
2
s]
T
VJ
= 45°C
T
VJ
= 125°C
P
tot
[W]
I
dAVM
[A]
T
a
[°C]
Fig. 1 Surge overload current I
TSM
,
I
FSM
: Crest value, t: duration
Fig. 2 I
2
t versus time (1-10 ms)
Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation vs. on-state current & ambient temperature
(per thyristor or diode)
Fig. 5 Gate trigger characteristics
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
Fig. 7 Gate trigger delay time
180° sin
120°
60°
30°
DC
0.01 0.1 1 10
1
10
100
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
I
G
[A]
V
G
[V]
I
G
[A]
T
VJ
= 25°C
t
gd
[ s]
limit
typ.
50 Hz
80% V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
DC
30°
60°
120°
180° sin
R
thKA
K/W
0.30
0.10
0.15
0.20
0.04
0.06
0.02
R
thKA
K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
I
GD
, T
VJ
= 130°C
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
1
2
3
4
5
6
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20160408bData according to IEC 60747and per semiconductor unless otherwise specified
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