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SMUN5312DW1T1G

P1-P3P4-P6P7-P9P10-P10
MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
www.onsemi.com
4
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5312DW1, NSBC124EPDXV6
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
Figure 6. Input Voltage vs. Output Current
50
010203040
1.6
0.8
0
V
R
, REVERSE VOLTAGE (V)
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
0.4
1.2
2.0
2.4
2.8
3.2
C
ob
, OUTPUT CAPACITANCE (pF)
1
0.1
0.01
0.001
01020
50
I
C
, COLLECTOR CURRENT (mA)
T
A
=-55°C
25°C
150°C
I
C
/I
B
= 10
V
CE(sat)
, COLLECTOR-EMITTER VOLTAGE (V)
30
40
h
FE
, DC CURRENT GAIN
1000
100
1
1 10 100
I
C
, COLLECTOR CURRENT (mA)
T
A
=150°C
25°C
-55°C
V
CE
= 10 V
10
I
C
, COLLECTOR CURRENT (mA)
150°C
25°C
T
A
=-55°C
100
10
1
0.1
0.01
0.001
01 234
V
in
, INPUT VOLTAGE (V)
56 78 910
V
O
= 5 V
V
in
, INPUT VOLTAGE (V)
1002030
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
T
A
=-55°C
150°C
25°C
40 50
V
O
= 0.2 V
100
MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
www.onsemi.com
5
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5312DW1, NSBC124EPDXV6
C
ob,
OUTPUT CAPACITANCE (pF)
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
Figure 11. Input Voltage vs. Output Current
50
010203040
10
3
2
1
0
V
R
, REVERSE VOLTAGE (V)
f = 10 kHz
l
E
= 0 A
T
A
= 25°C
4
5
6
7
8
9
0.001
20
I
C
, COLLECTOR CURRENT (mA)
0.1
1
0 40
50
I
C
/I
B
= 10
T
A
=-55°C
25°C
150°C
V
CE(sat)
, COLLECTOR-EMITTER VOLTAGE (V)
10 30
0.01
h
FE
, DC CURRENT GAIN
1000
1 10 100
I
C
, COLLECTOR CURRENT (mA)
T
A
=150°C
-55°C
100
1
25°C
V
CE
= 10 V
10
I
C
, COLLECTOR CURRENT (mA)
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
=-55°C
25°C
1 2 3 4 5 6 7 8 9 10
150°C
V
O
= 5 V
V
in
, INPUT VOLTAGE (V)
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
T
A
=-55°C
25°C
150°C
V
O
= 0.2 V
MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
www.onsemi.com
6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC124EPDP6
Figure 12. V
CE(sat)
vs. I
C
1002030
I
C
, COLLECTOR CURRENT (mA)
100
1
0.1
40 50
Figure 13. DC Current Gain
Figure 14. Output Capacitance
1
0.1
0.01
02040
50
I
C
, COLLECTOR CURRENT (mA)
1000
100
1
0.1 10 10
0
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Output Current vs. Input Voltage
100
10
1
0.1
0.01
02 64
V
in
, INPUT VOLTAGE (V)
816
Figure 16. Input Voltage vs. Output Current
50
010 203040
0.4
1.2
0
V
R
, REVERSE VOLTAGE (V)
30
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
/I
B
= 10
−55°C
25°C
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
0.8
1.6
2.0
2.4
C
ob
, OUTPUT CAPACITANCE (pF)
V
O
= 5 V
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
10
150°C
−55°C
25°C
150°C
1
10
10
−55°C
25°C
150°C
−55°C
25°C
150°C
10 12 14
P1-P3P4-P6P7-P9P10-P10

SMUN5312DW1T1G

Mfr. #:
Buy SMUN5312DW1T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased SS BR XSTR DUAL 50V
Lifecycle:
New from this manufacturer.
Delivery:
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