SIRA18ADP-T1-GE3 Datasheet SIRA18ADP-T1-GE3 | P1-P3

SiRA18ADP

www.vishay.com

Vishay Siliconix

S15-0734-Rev. A, 13-Apr-15

1

Document Number: 65314

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET

Ordering Information:

SiRA18ADP-T1-GE3 (lead (Pb)-free and halogen-free)

FEATURES

• TrenchFET

®

Gen IV power MOSFET

• 100 % R

g

and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•DC/DC conversion

• Battery protection

• Load switching

• DC/AC inverters

• Synchronous buck converters

Notes

a. Based on T

C

= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() MAX. I

D

(A)

a

Q

g

(TYP.)

30

0.0087 at V

GS

= 10 V 30.6

6.9 nC

0.0135 at V

GS

= 4.5 V 24.5

PowerPAK

®

SO-8 Single

Top View

1

6.15 mm

5.15 mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

30

V

Gate-Source Voltage V

GS

+20, -16

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

30.6

A

T

C

= 70 °C 24.5

T

A

= 25 °C 14.5

b, c

T

A

= 70 °C 11.5

b, c

Pulsed Drain Current (t = 300 μs) I

DM

70

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

13.3

T

A

= 25 °C 3

b, c

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

10

Single Pulse Avalanche Energy E

AS

5mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

14.7

W

T

C

= 70 °C 9.4

T

A

= 25 °C 3.3

b, c

T

A

= 70 °C 2.1

b ,c

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum Junction-to-Ambient

b, f

t  10 s R

thJA

30 37

°C/W

Maximum Junction-to-Case (Drain) Steady State R

thJC

78.5

SiRA18ADP

www.vishay.com

Vishay Siliconix

S15-0734-Rev. A, 13-Apr-15

2

Document Number: 65314

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. T

CASE

= 25 °C; Expected voltage stress during 100 % UIS test. Production data log is not available.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 30 - -

V

Drain-Source Breakdown Voltage

(transient)

c

V

DSt

V

GS

= 0 V, I

D(aval)

= 8.2 A, t

transcient

 50 ns 36 - -

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= 250 μA

-18.5-

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

--5.2-

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 1.2 - 2.4 V

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= +20, -16 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 30 V, V

GS

= 0 V - - 1

μA

V

DS

= 30 V, V

GS

= 0 V, T

J

= 55 °C - - 10

On-State Drain Current

a

I

D(on)

V

DS

 5 V, V

GS

= 10 V 30 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 10 A - 0.0070 0.0087



V

GS

= 4.5 V, I

D

= 8 A - 0.0097 0.0135

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 10 A - 54 - S

Dynamic

b, d

Input Capacitance C

iss

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz

- 1000 -

pF

Output Capacitance C

oss

- 287 -

Reverse Transfer Capacitance C

rss

-34-

C

rss

/C

iss

Ratio - 0.034 0.068

Total Gate Charge Q

g

V

DS

= 15 V, V

GS

= 10 V, I

D

= 10 A - 14.3 21.5

nCV

DS

= 15 V, V

GS

= 4.5 V, I

D

= 10 A

- 6.9 10.5

Gate-Source Charge Q

gs

-2.8-

Gate-Drain Charge Q

gd

-1.6-

Output Charge Q

oss

V

DS

= 15 V, V

GS

= 0 V - 7.8 -

Gate Resistance R

g

f = 1 MHz 0.4 1.6 3.2 

Turn-On Delay Time t

d(on)

V

DD

= 15 V, R

L

= 1.5 

I

D

 10 A, V

GEN

= 10 V, R

g

= 1 

-1122

ns

Rise Time t

r

-918

Turn-Off Delay Time t

d(off)

-1530

Fall Time t

f

-510

Turn-On Delay Time t

d(on)

V

DD

= 15 V, R

L

= 1.5 

I

D

 10 A, V

GEN

= 4.5 V, R

g

= 1 

-1530

Rise Time t

r

-1020

Turn-Off Delay Time t

d(off)

-1530

Fall Time t

f

-714

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

T

C

= 25 °C - - 13.3

A

Pulse Diode Forward Current

a

I

SM

--70

Body Diode Voltage V

SD

I

S

= 5 A - 0.77 1.1 V

Body Diode Reverse Recovery Time t

rr

I

F

= 5 A, dI/dt = 100 A/μs,

T

J

= 25 °C

-1935ns

Body Diode Reverse Recovery Charge Q

rr

-714nC

Reverse Recovery Fall Time t

a

-10-

ns

Reverse Recovery Rise Time t

b

-9-

SiRA18ADP

www.vishay.com

Vishay Siliconix

S15-0734-Rev. A, 13-Apr-15

3

Document Number: 65314

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

14

28

42

56

70

0.0 0.5 1.0 1.5 2.0 2.5

I

D

-

Drain Current (A)

V

DS

-Drain-to-Source Voltage (V)

V

GS

= 3 V

V

GS

= 10 V thru 4V

V

GS

= 2 V

0

0.004

0.008

0.012

0.016

0.020

01428425670

R

DS(on)

-On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

2

4

6

8

10

0 3 6 9 12 15

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

DS

= 15 V

V

DS

= 20 V

V

DS

= 10 V

I

D

= 10 A

0

14

28

42

56

70

0.0 1.0 2.0 3.0 4.0 5.0

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

0

240

480

720

960

1200

0 5 10 15 20 25 30

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.7

0.9

1.1

1.3

1.5

1.7

- 50 - 25 0 25 50 75 100 125 150

R

DS(on)

-On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

I

D

= 10 A

V

GS

= 10 V

V

GS

= 4.5 V

SIRA18ADP-T1-GE3

SIRA18ADP-T1-GE3

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