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SI4104DY-T1-E3

P1-P3P4-P6P7-P7
www.vishay.com
4
Document Number: 69936
S09-0764-Rev. B, 04-May-09
Vishay Siliconix
Si4104DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
1.0 1.2
0.001
10
100
0.00 0.2 0.4 0.6 0.8
25 °C
150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
1
0.1
0.01
T
J
- Temperature (°C)
- 1.3
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
0.8
- 50 - 25 0 25 50 75 100 125 150
I
D
=250 µA
Variance (V)V
GS(th)
I
D
=5mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
V
GS
- Gate-to-Source Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
5678 910
- On-Resistance (Ω)R
DS(on)
125 °C
25 °C
I
D
= 5 A
0
20
40
60
80
100
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
-DrainCurrent (A)I
D
0.1
1ms
T
A
= 25 °C
Single Pulse
10 ms
100 ms
DC
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1s
10 s
Limited byR
DS(on)*
Document Number: 69936
S09-0764-Rev. B, 04-May-09
www.vishay.com
5
Vishay Siliconix
Si4104DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
5
6
0 25 50 75 100 125 150
I
D
-DrainCurrent (A)
T
C
- Case Temperature (°C)
Power, Junction-to-Foot
0.0
1.2
2.4
3.6
4.8
6.0
0255075100125150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 69936
S09-0764-Rev. B, 04-May-09
Vishay Siliconix
Si4104DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69936
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
000110110
-1
10
-4
100
0.2
0.1
0.05
0.02
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
1
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
P1-P3P4-P6P7-P7

SI4104DY-T1-E3

Mfr. #:
Buy SI4104DY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4100DY-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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