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NLV17SZ07DFT2G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 0
1 Publication Order Number:
NLV17SZ07/D
NLV17SZ07
Single Non-Inverting Buffer
with Open Drain Output
The NLV17SZ07 is a high performance single non−inverting buffer
with open drain outputs operating from a 1.65 to 5.5 V supply.
The Output stage is open drain with Over Voltage Tolerance. This
allows the NLV17SZ07 to be used to interface 5.0 V circuits to circuits
of any voltage between 0 and +7.0 V.
Features
• Tiny SOT−353 Package
• Extremely High Speed: t
PD
2.5 ns (typical) at V
CC
= 5 V
• Designed for 1.65 V to 5.5 V V
CC
Operation, CMOS Compatible
• Over Voltage Tolerant Inputs V
IN
may be Between 0 and 7.0 V for
V
CC
Between 0.5 and 5.5 V
• TTL Compatible − Interface Capability with 5.0 V TTL Logic with
V
CC
= 2.7 V to 3.6 V
• LVCMOS Compatible
• 24 mA Output Sink Capability, Pullup may be between 0 and 7.0 V
• Near Zero Static Supply Current Substantially Reduces System
Power Requirements
• Chip Complexity: FET = 20
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
CC
NC
IN A
OUT Y
GND
IN A
OUT Y
1
OVT
Figure 1. Pinout
Figure 2. Logic Symbol
1
2
3
4
5
SOT−353
MARKING
DIAGRAMS
www.onsemi.com
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
L7 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
L7 M G
M
G
NLV17SZ07
www.onsemi.com
2
PIN ASSIGNMENT
Pin
1
2
3
4
5
Function
NC
IN A
GND
OUT Y
V
CC
Input
FUNCTION TABLE
Output
Y
L
Z
A
L
H
MAXIMUM RATINGS
Symbol Characteristics Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
I
DC Input Voltage −0.5 ≤ V
I
≤ +7.0 V
V
O
DC Output Voltage Active Mode, LOW State (Note 1)
Tri−State Mode
Power−Down Mode (V
CC
= 0 V)
−0.5 to V
CC
+ 0.5
−0.5 to +7.0
−0.5 to +7.0
V
I
OK
DC Output Diode Current V
O
< GND −50 mA
I
IK
DC Input Diode Current V
I
< GND −50 mA
I
O
DC Output Sink Current ±50 mA
I
CC
DC Supply Current per Supply Pin ±100 mA
I
GND
DC Ground Current per Ground Pin ±100 mA
T
STG
Storage Temperature Range −65 to +150 °C
P
D
Power Dissipation in Still Air 186 mW
q
JA
Thermal Resistance 350 °C/W
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias +150 °C
I
Latch−Up
Latch−Up Performance Above V
CC
and Below GND at 85°C (Note 5) ±500 mA
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
ESD ESD Classification Human Body Model (Note 3)
Machine Model (Note 4)
Charged Device Model (Note 5)
Class 2
Class B
N/A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. I
O
absolute maximum rating must be observed.
2. Tested to EIA/JESD22−A114−A, rated to EIA/JESD22−A114−B.
3. Tested to EIA/JESD22−A115−A, rated to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
NLV17SZ07
www.onsemi.com
3
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Supply Voltage Operating
Data Retention Only
1.65
1.5
5.5
5.5
V
V
I
Input Voltage 0 5.5 V
V
O
Output Voltage Active Mode, LOW State
Tri−State Mode
Power−Down Mode (V
CC
= 0 V)
0
0
0
V
CC
5.5
5.5
V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 2.5 V ±0.2 V
V
CC
= 3.0 V ±0.3 V
V
CC
= 5.0 V ±0.5 V
0
0
0
20
10
5
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Symbo
l
Parameter Condition
V
CC
(V)
T
A
= 25°C −55°C ≤T
A
≤ 125°C
Uni
t
Min Typ Max Min Max
V
IH
High−Level Input Voltage 1.65 to 1.95
2.3 to 5.5
0.75 V
CC
0.7 V
CC
0.75 V
CC
0.7 V
CC
V
V
IL
Low−Level Input Voltage 1.65 to 1.95
2.3 to 5.5
0.25 V
CC
0.3 V
CC
0.25 V
CC
0.3 V
CC
V
I
LKG
Z−State Output Leakage
Current
V
IN
= V
IH
V
OUT
= V
CC
or GND
2.3 to 5.5 ±5.0 ±10.0
mA
V
OL
Low−Level Output
Voltage
V
IN
= V
IL
I
OL
= 100 mA
1.65 to 5.5 0.0 0.1 0.1
V
I
OL
= 4 mA 1.65 0.08 0.24 0.24
I
OL
= 8 mA 2.3 0.20 0.3 0.3
I
OL
= 12 mA 2.7 0.22 0.4 0.4
I
OL
= 16 mA 3.0 0.28 0.4 0.4
I
OL
= 24 mA 3.0 0.38 0.55 0.55
I
OL
= 32 mA 4.5 0.42 0.55 0.55
I
IN
Input Leakage Current V
IN
= 5.5 V or GND 0 to 5.5 ±0.1 ±1.0
mA
I
OFF
Power Off Leakage
Current
V
IN
= 5.5 V or
V
OUT
= 5.5 V
0 1 10
mA
I
CC
Quiescent Supply Current V
IN
= 5.5 V or GND 5.5 1 10
mA
I
CCT
Quiescent Supply Current V
IN
= 3.0 V 3.6 10 100
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
P1-P3P4-P6

NLV17SZ07DFT2G

Mfr. #:
Buy NLV17SZ07DFT2G
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers LOG BUFFER W/OPEN DR
Lifecycle:
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