Si7190ADP
www.vishay.com
Vishay Siliconix
S17-1413-Rev. A, 11-Sep-17
1
Document Number: 75633
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 250 V (D-S) MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Low thermal resistance PowerPAK
®
package
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Primary side switch
• Synchronous rectification
•DC/DC converter
• Lighting
• Industrial
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
e. Maximum under steady state conditions is 68 °C/W
f. T
C
= 25 °C
PRODUCT SUMMARY
V
DS
(V) 250
R
DS(on)
max. () at V
GS
= 10 V 0.102
R
DS(on)
max. () at V
GS
= 7.5 V 0.110
Q
g
typ. (nC) 11.7
I
D
(A) 14.4
f
Configuration Single
PowerPAK
®
SO-8 Single
Top View
1
6.15 mm
5.15 mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
ORDERING INFORMATION
Package PowerPAK SO-8
Lead (Pb)-free and halogen-free Si7190ADP-T1-RE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
250
V
Gate-source voltage V
GS
± 20
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
14.4
A
T
C
= 70 °C 11.5
T
A
= 25 °C 4.3
a, b
T
A
= 70 °C 3.4
a, b
Pulsed drain current (t = 100 μs) I
DM
30
Continuous source-drain diode current
T
C
= 25 °C
I
S
47.3
T
A
= 25 °C 4.2
a, b
Single pulse avalanche current
L = 0.1 mH
I
AS
9
Single pulse avalanche energy E
AS
4.05 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
56.8
W
T
C
= 70 °C 36.4
T
A
= 25 °C 5
a, b
T
A
= 70 °C 3.2
a, b
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
a
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
a
t 10 s R
thJA
20 25
°C/W
Maximum junction-to-case (drain) Steady state R
thJC
1.7 2.2