VHF15-08IO5

© 2000 IXYS All rights reserved
1 - 3
I
dAVM
= 21 A
V
RRM
= 800-1600 V
V
RSM
V
RRM
Type
V
DSM
V
DRM
VV
900 800 VHF 15-08io5
1300 1200 VHF 15-12io5
1500 1400 VHF 15-14io5
1700 1600 VHF 15-16io5
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Test Conditions Maximum Ratings
I
dAV
T
K
= 85°C, module 15 A
I
dAVM
module 21 A
I
FRMS
, I
TRMS
per leg 15 A
I
FSM
, I
TSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine 190 A
V
R
= 0 V t = 8.3 ms (60 Hz), sine 210 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 170 A
V
R
= 0 V t = 8.3 ms (60 Hz), sine 190 A
I
2
t T
VJ
= 45°C t = 10 ms (50 Hz), sine 160 A
2
s
V
R
= 0 V t = 8.3 ms (60 Hz), sine 180 A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 140 A
2
s
V
R
= 0 V t = 8.3 ms (60 Hz), sine 145 A
2
s
(di/dt)
cr
T
VJ
= 125°C repetitive, I
T
= 50 A 150 A/ms
f =50 Hz, t
P
=200 ms
V
D
= 2/3 V
DRM
I
G
= 0.3 A, non repetitive, I
T
= 1/2 • I
dAV
500 A/ms
di
G
/dt = 0.3 A/ms
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
1000 V/ms
R
GK
= ¥; method 1 (linear voltage rise)
V
RGM
10 V
P
GM
T
VJ
= T
VJM
t
p
= 30 ms £ 10 W
I
T
= I
TAVM
t
p
= 500 ms £ 5W
t
p
= 10 ms £ 1W
P
GAVM
0.5 W
T
VJ
-40...+125 °C
T
VJM
125 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz, RMS t = 1 min 3000 V~
I
ISOL
£ 1 mA t = 1 s 3600 V~
M
d
Mounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight 50 g
Features
Package with DCB ceramic base
plate
Isolation voltage 3600 V~
Planar passivated chips
1/4" fast-on terminals
UL registered E 72873
Applications
Supply for DC power equipment
DC motor control
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
VHF 15
Half Controlled
Single Phase Rectifier Bridge
with Freewheeling Diode
1
2
3
6
8
4
2
8
6
4
31
© 2000 IXYS All rights reserved
2 - 3
Symbol Test Conditions Characteristic Values
I
R
, I
D
V
R
= V
RRM
; V
D
= V
DRM
T
VJ
= T
VJM
£ 5mA
T
VJ
= 25°C £ 0.3 mA
V
T
, V
F
I
T
, I
F
= 45 A; T
VJ
= 25°C £ 2.8 V
V
T0
For power-loss calculations only (T
VJ
= 125°C) 1.0 V
r
T
40 mW
V
GT
V
D
= 6 V; T
VJ
= 25°C £ 1.0 V
T
VJ
= -40°C £ 1.2 V
I
GT
V
D
= 6 V; T
VJ
= 25°C £ 65 mA
T
VJ
= -40°C £ 80 mA
T
VJ
= 125°C £ 50 mA
V
GD
T
VJ
= T
VJM
;V
D
= 2/3 V
DRM
£ 0.2 V
I
GD
T
VJ
= T
VJM
;V
D
= 2/3 V
DRM
£ 5mA
I
L
I
G
= 0.3 A; t
G
= 30 ms; T
VJ
= 25°C £ 150 mA
di
G
/dt = 0.3 A/ms; T
VJ
= -40°C £ 200 mA
T
VJ
= 125°C £ 100 mA
I
H
T
VJ
= 25°C; V
D
= 6 V; R
GK
= ¥£100 mA
t
gd
T
VJ
= 25°C; V
D
= 1/2 V
DRM
£ 2 ms
I
G
= 0.3 A; di
G
/dt = 0.3 A/ms
t
q
T
VJ
= 125°C, I
T
= 15 A, t
P
= 300 ms, V
R
= 100 V typ. 150 ms
Q
r
di/dt = -10 A/ms, dv/dt = 20 V/ms, V
D
= 2/3 V
DRM
75 mC
R
thJC
per thyristor (diode); DC current 2.4 K/W
per module 0.6 K/W
R
thJK
per thyristor (diode); DC current 3.0 K/W
per module 0.75 K/W
d
S
Creepage distance on surface 12.6 mm
d
A
Creepage distance in air 6.3 mm
a Max. allowable acceleration 50 m/s
2
VHF 15
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time t
gd
1 10 100 1000
0.1
1
10
I
G
V
G
mA
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
V
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125°C
4
2
1
5
6
10 100 1000
1
10
100
1000
µs
t
gd
T
VJ
= 25°C
typ.
Limit
mA
I
G
3
750
© 2000 IXYS All rights reserved
3 - 3
Fig. 3 Surge overload current per chip
I
FSM
: Crest value, t: duration
Fig. 5 Max. forward current at
heatsink temperature
Fig. 4 I
2
t versus time (1-10 ms)
per chip
Fig. 6 Power dissipation versus direct output current and ambient temperature
Fig. 7 Transient thermal impedance junction to heatsink per chip
Constants for Z
thJK
calculation:
iR
thi
(K/W) t
i
(s)
1 0.34 0.0344
2 1.16 0.12
3 1.5 0.5
VHF 15

VHF15-08IO5

Mfr. #:
Manufacturer:
Littelfuse
Description:
SCR Modules 15 Amps 800V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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