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NLU1GT125MUTCG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 6
1 Publication Order Number:
NLU1GT125/D
NLU1GT125
Non-Inverting 3-State
Buffer, TTL Level
LSTTL−Compatible Inputs
The NLU1GT125 MiniGatet is an advanced CMOS high−speed
non−inverting buffer in ultra−small footprint.
The NLU1GT125 requires the 3−state control input OE
to be set
High to place the output in the high impedance state.
The device input is compatible with TTL−type input thresholds and
the output has a full 5.0 V CMOS level output swing.
The NLU1GT125 input and output structures provide protection
when voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
• High Speed: t
PD
= 3.8 ns (Typ) @ V
CC
= 5.0 V
• Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
• TTL−Compatible Input: V
IL
= 0.8 V; V
IH
= 2.0 V
• CMOS−Compatible Output:
V
OH
> 0.8 V
CC
; V
OL
< 0.1 V
CC
@ Load
• Power Down Protection Provided on inputs
• Balanced Propagation Delays
• Ultra−Small Packages
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These are Pb−Free Devices
V
CC
OE
IN A
OUT YGND
1
2
3
5
4
OE
OUT Y
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
6
NC
IN A
PIN ASSIGNMENT
1
2
3 GND
OE
IN A
4
5NC
OUT Y
FUNCTION TABLE
L
H
X
AY
L
H
Z
6V
CC
Input Output
OE
L
L
H
MARKING
DIAGRAMS
7 = Device Marking
M = Date Code
www.onsemi.com
See detailed ordering and shipping information on page 4 of
this data sheet.
ORDERING INFORMATION
7M
1
UDFN6
1.2 x 1.0
CASE 517AA
UDFN6
1.45 x 1.0
CASE 517AQ
UDFN6
1.0 x 1.0
CASE 517BX
1
D M
1
L M
NLU1GT125
www.onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to +7.0 V
I
IK
DC Input Diode Current V
IN
< GND −20 mA
I
OK
DC Output Diode Current V
OUT
< GND ±20 mA
I
O
DC Output Source/Sink Current ±12.5 mA
I
CC
DC Supply Current Per Supply Pin ±25 mA
I
GND
DC Ground Current per Ground Pin ±25 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias 150 °C
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 2) ±500 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
Positive DC Supply Voltage 1.65 5.5 V
V
IN
Digital Input Voltage 0 5.5 V
V
OUT
Output Voltage 0 5.5 V
T
A
Operating Free−Air Temperature −55 +125 °C
Dt/DV
Input Transition Rise or Fall Rate V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
NLU1GT125
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Conditions V
CC
(V)
T
A
= 25 5C T
A
= +855C
T
A
= −555C
to +1255C
Unit
Min Typ Max Min Max Min Max
V
IH
Low−Level Input
Voltage
3.0
4.5 to 5.5
1.4
2.0
1.4
2.0
1.4
2.0
V
V
IL
Low−Level Input
Voltage
3.0
4.5 to 5.5
0.53
0.8
0.53
0.8
0.53
0.8
V
V
OH
High−Level Output
Voltage
V
IN
= V
IH
or V
IL
I
OH
= −50 mA
3.0
4.5
2.9
4.4
3.0
4.5
2.9
4.4
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
OL
Low−Level Output
Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
3.0
4.5
0
0
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
IN
Input Leakage
Current
0 v V
IN
v 5.5 V 0 to 5.5 ±0.1 ±1.0 ±1.0
mA
I
CC
Quiescent Supply
Current
0 v V
IN
v V
CC
5.5 1.0 20 40
mA
I
CCT
Quiescent Supply
Current
V
IN
= 3.4 V
Other Input: V
CC
or GND
5.5 1.35 1.50 1.65 mA
I
OPD
Output Leakage
Current
V
OUT
= 5.5 V 0.0 0.5 5.0 10
mA
I
OZ
3−State Leakage
Current
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or
GND
0.0 ±0.25 ±2.5 ±2.5
mA
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbol
Parameter
V
CC
(V)
Test
Condition
T
A
= 25 5C T
A
= +855C
T
A
= −555C
to +1255C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Propagation Delay, A to Y
(Figures 3 and 5)
3.0 to 3.6 C
L
= 15 pF
C
L
= 50 pF
5.6
8.1
8.0
11.5
1.0
1.0
9.5
13.0
12.0
16.0
ns
4.5 to 5.5 C
L
= 15 pF
C
L
= 50 pF
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
8.5
10.5
t
PZL
,
t
PZH
Output Enable Time, OE to Y
(Figures 4 and 6)
3.0 to 3.6 C
L
= 15 pF
C
L
= 50 pF
5.4
7.9
8.0
11.5
1.0
1.0
9.5
13.0
11.5
15.0
ns
4.5 to 5.5 C
L
= 15 pF
C
L
= 50 pF
3.6
5.1
5.1
7.1
1.0
1.0
6.0
8.0
7.5
9.5
t
PLZ
,
t
PHZ
Output Disable Time, OE to Y
(Figures 4 and 6)
3.0 to 3.6 C
L
= 15 pF
C
L
= 50 pF
6.5
8.0
9.7
13.2
1.0
1.0
11.5
15.0
14.5
18.5
ns
4.5 to 5.5 C
L
= 15 pF
C
L
= 50 pF
4.8
7.0
6.8
8.8
1.0
1.0
8.0
10.0
10.0
12.0
C
IN
Input Capacitance 4 10 10 10.0 pF
C
OUT
3−State Output Capacitance
(Output in High Impedance
State)
6 pF
C
PD
Power Dissipation
Capacitance (Note 3)
5.0 14 pF
3. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
• V
CC
• f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
• V
CC
2
• f
in
+ I
CC
• V
CC.
P1-P3P4-P6P7-P7

NLU1GT125MUTCG

Mfr. #:
Buy NLU1GT125MUTCG
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers HS CMOS NON-IVERTING BUFFER
Lifecycle:
New from this manufacturer.
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