Low Light Rejection Phototransistor
Side-looking plastic package
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50¡ (nominal) acceptance angle
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Mechanically and spectrally matched to
SEP8506 and SEP8706 infrared emitting diodes
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The SDP8476 is an NPN silicon phototransistor which
internal base-emitter shunt resistance. Transfer molding
of this device in a clear T-1 plastic package assures
superior optical centerline performance compared to
other molding processes. Lead lengths are staggered to
provide a simple method of polarity identification.
This device incorporates all of the desired features of a
standard phototransistor with the advantage of low light
immunity. The phototransistor switching occurs when
the incident light increases above the threshold (knee
point). When the light level exceeds the knee point of
the device, it will function as a standard phototransistor.
Chart A illustrates the light current output of the low light
rejection phototransistor as compared to a standard
phototransistor with similar sensitivity.
Typical Application Uses:
Ideally suited for use in applications which require
ambient light rejection, or in transmissive applications
where the interrupter media is semi-transparent to
infrared energy. This device also provides high contrast
ratio in reflective applications where unwanted
background reflection is a possibility.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
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