Philips Semiconductors Product specification
GTL16612
18-bit GTL/GTL
+
to LVTTL/TTL bidirectional
universal translator (3-State)
2002 Dec 13
7
AC CHARACTERISTICS (A PORT)
GND = 0 V; t
r
= t
f
= 2.5 ns; C
L
= 50 pF; R
L
= 500 Ω; T
amb
= -40 to +85 °C.
GTL GTL+
GTL16612 An Port
V
CC
= 3.3 V ±0.3 V V
CC
= 3.3 V ±0.3 V
V
REF
= 0.8 V V
REF
= 1.0 V
UNIT
SYMBOL PARAMETER WAVEFORM MIN TYP
1
MAX MIN TYP
1
MAX
t
PLH
Bn to An 2 1.6 3.0 5.0 1.6 3.0 5.0 ns
t
PHL
Bn to An 2 3.0 4.9 6.3 3.0 4.9 6.3 ns
t
PLH
LEBA to An 3 1.6 2.7 4.2 1.6 2.7 4.2 ns
t
PHL
LEBA to An 3 1.6 2.8 4.3 1.6 2.8 4.3 ns
t
PLH
CPBA to An 1 1.9 3.4 4.7 1.9 3.4 4.7 ns
t
PHL
CPBA to An 1 1.8 3.8 5.2 1.8 3.8 5.2 ns
t
PZH
OEBA to An 5 1.5 2.6 4.2 1.5 2.6 4.2 ns
t
PHZ
OEBA to An 5 1.4 2.9 4.8 1.4 2.9 4.8 ns
t
PZL
OEBA to An 6 1.3 2.4 3.8 1.3 2.4 3.8 ns
t
PLZ
OEBA to An 6 1.2 2.2 3.5 1.2 2.2 3.5 ns
NOTE:
1. Typical values are at V
CC
= 3.3 V, T
amb
= +25 °C.
AC CHARACTERISTICS (B PORT)
GND = 0 V; t
r
= t
f
= 2.5 ns; C
L
= 30 pF; R
L
= 25 Ω; T
amb
= -40 to +85 °C.
GTL GTL+
GTL16612 Bn Port
V
CC
= 3.3 V ±0.3 V V
CC
= 3.3 V ±0.3 V
V
REF
= 0.8 V V
REF
= 1.0 V
UNIT
SYMBOL PARAMETER WAVEFORM MIN TYP
1
MAX MIN TYP
1
MAX
t
PLH
An to Bn 2 1.4 2.4 3.7 1.3 2.4 3.7 ns
t
PHL
An to Bn 2 1.3 2.5 4.0 1.4 2.6 4.2 ns
t
PLH
LEAB to Bn 3 1.7 3.0 4.4 1.8 3.0 4.6 ns
t
PHL
LEAB to Bn 3 2.1 3.5 5.4 2.3 3.6 5.5 ns
t
PLH
CPAB to Bn 1 1.8 3.1 4.5 1.9 3.1 4.8 ns
t
PHL
CPAB to Bn 1 2.3 3.6 5.4 2.4 3.8 5.8 ns
t
PLH
OEAB to Bn 7 1.1 2.1 3.3 1.4 2.0 3.5 ns
t
PHL
OEAB to Bn 7 1.6 2.8 4.4 1.0 2.9 4.5 ns
NOTE:
1. Typical values are at V
CC
= 3.3 V, T
amb
= +25 °C.