IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA220N04T2-7
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 40 66 S
C
iss
6820 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 1185 pF
C
rss
250 pF
t
d(on)
15 ns
t
r
21 ns
t
d(off)
31 ns
t
f
21 ns
Q
g(on)
112 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
33 nC
Q
gd
30 nC
R
thJC
0.42 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0V 220 A
I
SM
Repetitive, Pulse width limited by T
JM
660 A
V
SD
I
F
= 50A, V
GS
= 0V, Note 1 1.0 V
t
rr
45 ns
I
RM
1.4
A
Q
RM
32 nC
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
V
GS
= 10V, V
DS
= 20V, I
D
= 50A
R
G
= 3.3Ω (External)
I
F
= 110A, V
GS
= 0V
-di/dt = 100A/μs
V
R
= 20V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate
2, 3 - Source
4 - Drain
5,6,7 - Source
Tab (8) - Drain
TO-263 (7-lead) (IXTA..7) Outline
