AOTF11N62
Symbol Min Typ Max Units
620
720
BV
DSS
/∆TJ
0.67
V/
o
C
1
10
I
GSS
Gate-Body leakage current
±100
nΑ
V
GS(th)
Gate Threshold Voltage
3.3 3.9 4.5 V
R
DS(ON)
0.56 0.65 Ω
g
FS
12 S
V
SD
0.73 1 V
I
S
Maximum Body-Diode Continuous Current 11 A
I
SM
39 A
C
iss
1320 1656 1990 pF
C
oss
100 146 195 pF
C
rss
6.5 11.2 16 pF
R
g
1.7 3.5 5.3 Ω
Q
g
24 30.6 37 nC
Q
gs
9.6 nC
Q
gd
9.6 nC
t
D(on)
39 ns
t
r
58 ns
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=5.5A
Forward Transconductance
Diode Forward Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
DS
=5V
I
D
=250µA
V
DS
=500V, T
J
=125°C
Breakdown Voltage Temperature
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
DS
=620V, V
GS
=0V
BV
DSS
I
D
=250µA, V
GS
=0V
µA
V
DS
=0V, V
GS
=±30V
V
Drain-Source Breakdown Voltage
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=10V, V
DS
=300V, I
D
=11A,
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Reverse Transfer Capacitance
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Gate Drain Charge
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=11A
Gate Source Charge
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=5.5A
t
f
42 ns
t
rr
400
500
600
ns
Q
rr
4.7
5.9
7.1
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=11A,dI/dt=100A/µs,V
DS
=100V
Body Diode Reverse Recovery Charge
I
F
=11A,dI/dt=100A/µs,V
DS
=100V
Turn-Off Fall Time
Body Diode Reverse Recovery Time
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=4.8A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
Rev1: July 2012 www.aosmd.com Page 2 of 6
