OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

4N25-X006

P1-P3P4-P6P7-P7
4N25-X, 4N26-X, 4N27-X, 4N28-X
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 16-Jan-12
1
Document Number: 81864
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, with Base Connection
DESCRIPTION
The 4N25 family is an Industry Standard Single Channel
Phototransistor Coupler. This family includes the 4N25, 4N26,
4N27, 4N28. Each optocoupler consists of gallium arsenide
infrared LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to
comply with a 5300 V
RMS
isolation test voltage. This isolation
performance is accomplished through special Vishay
manufacturing process.
Compliance to DIN EN 60747-5-2 (VDE 0884)/
DIN EN 60747-5-5 pending partial discharge isolation
specification is available by ordering option 1.
These isolation processes and the Vishay ISO9001 quality
program results in the highest isolation performance available
for a commercial plastic phototransistor optocoupler.
The devices are also available in lead formed configuration
suitable for surface mounting and are available either on tape
and reel, or in standard tube shipping containers.
Note
• For additional design information see application note 45
normalized curves
FEATURES
• Isolation test voltage 5000 V
RMS
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in-line 6-pin package
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• AC mains detection
• Reed relay driving
• Switch mode power supply feedback
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high frequency noise rejection
AGENCY APPROVALS
• UL file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
• BSI: EN 60065, EN 60950-1
•FIMKO
•CQC
Notes
• Additional options may be possible, please contact sales office.
(1)
Also available in tubes; do not put T on end.
1
2
3
6
5
4
B
C
E
A
C
NC
i179004-14
ORDERING INFORMATION
4N2x-X0##T
PART NUMBER PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, cUL, BSI, FIMKO ≥ 20 ≥ 10
DIP-6 4N25-X000 - 4N27-X000 -
DIP-6, 400 mil, option 6 4N25-X006 4N26-X006 - -
SMD-6, option 7 4N25-X007T - 4N27-X007 -
SMD-6, option 9 4N25-X009T
(1)
4N26-X009T
(1)
4N27-X009T
(1)
4N28-X009T
(1)
VDE, UL, cUL, BSI, FIMKO ≥ 20 ≥ 10
DIP-6 4N25-X001 4N26-X001 - 4N28-X001
DIP-6, 400 mil, option 6 4N25-X016 4N26-X016 - -
SMD-6, option 7 4N25-X017T
(1)
4N26-X017T
(1)
4N27-X017T -
7.62 mm 10.16 mm
> 8 mm
8 mm typ.
Option 7
Option 6
Option 9
DIP-6
4N25-X, 4N26-X, 4N27-X, 4N28-X
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 16-Jan-12
2
Document Number: 81864
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1)
JEDEC registered values are 2500 V, 1500 V, 1500 V and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Surge current t ≤ 10 μs I
FSM
2.5 A
Power dissipation P
diss
70 mW
OUTPUT
Collector emitter breakdown voltage V
CEO
70 V
Emitter base breakdown voltage V
EBO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Output power dissipation P
diss
150 mW
COUPLER
Isolation test voltage V
ISO
5000 V
RMS
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Isolation thickness between emitter and
detector
≥ 0.4 mm
Comparative tracking index DIN IEC 112/VDE0303, part 1 ≥ 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature
(1)
2 mm from case, ≤ 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage
(1)
I
F
= 50 mA V
F
1.36 1.5 V
Reverse current
(1)
V
R
= 3.0 V I
R
0.1 100 μA
Capacitance V
R
= 0 V C
O
25 pF
OUTPUT
Collector base breakdown voltage
(1)
I
C
= 100 μA BV
CBO
70 V
Collector emitter breakdown voltage
(1)
I
C
= 1.0 mA BV
CEO
30 V
Emitter collector breakdown voltage
(1)
I
E
= 100 μA BV
ECO
7V
I
CEO
(dark)
(1)
V
CE
= 10 V, (base open)
4N25 5 50 nA
4N26 5 50 nA
4N27 5 50 nA
4N28 10 100 nA
I
CBO
(dark)
(1)
V
CB
= 10 V,
(emitter open)
2.0 20 nA
Collector emitter capacitance V
CE
= 0 C
CE
6.0 pF
COUPLER
Isolation test voltage
(1)
Peak, 60 Hz V
IO
5000 V
Saturation voltage, collector emitter I
CE
= 2.0 mA, I
F
= 50 mA V
CE(sat)
0.5 V
Resistance, input output
(1)
V
IO
= 500 V R
IO
100 GΩ
Capacitance, input output f = 1 MHz C
IO
0.5 pF
4N25-X, 4N26-X, 4N27-X, 4N28-X
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 16-Jan-12
3
Document Number: 81864
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Indicates JEDEC registered values.
Fig. 1 - Test Circuit, Non-Saturated Operation Fig. 2 - Switching Times
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Voltage vs. Forward Current Fig. 4 - Collector Current vs. Collector Emitter Voltage (NS)
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 10 V, I
F
= 10 mA
4N25 CTR
DC
20 50 %
4N26 CTR
DC
20 50 %
4N27 CTR
DC
10 30 %
4N28 CTR
DC
10 30 %
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Rise time V
CC
= 5 V, I
F
= 10 mA, R
L
= 100 Ω t
r
2.0 μs
Fall time V
CC
= 5 V, I
F
= 10 mA, R
L
= 100 Ω t
f
2.0 μs
Channel I
Channel II
95 10804-3
R
G
= 50 Ω
t
p
t
p
= 50 µs
T
= 0.01
+ 5 V
I
F
0
50 Ω R
L
I
F
Oscilloscope
R
L
= 1 MΩ
C
L
= 20 pF
t
p
t
t
0
0
10 %
90 %
100 %
t
r
t
d
t
on
t
s
t
f
t
off
I
F
I
C
t
p
Pulse duration
t
d
Delay time
t
r
Rise time
t
on
(= t
d
+ t
r
) Turn-on time
t
s
Storage time
t
f
Fall time
t
off
(= t
s
+ t
f
) Turn-off time
96 11698
0.6
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.8
0.1 1 10 100
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
T
amb
= - 55 °C
1.5
0.7
T
amb
= - 40 °C
T
amb
= 100 °C
T
amb
= 75 °C
T
amb
= 50 °C
T
amb
= 25 °C
T
amb
= 0 °C
T
amb
= - 25 °C
1.6
1.7
0
20
30
40
50
60
01 78
V
CE
- Collector Emitter Voltage (NS) (V)
I
C
- Collector Current (mA)
10
65432
I
F
= 20 mA
I
F
= 15 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 5 mA
P1-P3P4-P6P7-P7

4N25-X006

Mfr. #:
Buy 4N25-X006
Manufacturer:
Vishay
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR>20%
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet