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NMSD200B01-7

P1-P3P4-P6P7-P8
DS30911 Rev. 7 - 2 1 of 8
www.diodes.com
NMSD200B01
© Diodes Incorporated
NMSD200B01
200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE
General Description
• NMSD200B01 is best suited for switching voltage
regulator and power management applications. It
improves efficiency and reliability of DC-DC controllers
used in Voltage Regulator Modules (VRM) and can
support continuous maximum current of 200mA. It
features an ESD protected discrete N-MOSFET with low
on-resistance and a discrete Schottky diode with low
forward drop. It reduces component count, consumes
less space and minimizes parasitic losses. The
component devices can be used as a part of a circuit or
as a stand alone discrete device.
Features
• N-MOSFET with ESD Gate Protection
• N-MOSFET with Low On-Resistance (R
DS(ON)
)
• Low V
f
Schottky Diode
• Low Static, Switching and Conduction Losses
• Good Dynamic Performance
• Surface Mount Package Suited for Automated Assembly
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-363
• Case Material: Molded Plastic. "Green Molding"
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 7
• Ordering Information: See Last Page
• Weight: 0.006 grams (approximate)
1
2
3
4
5
6
Sub-Components Reference Device Type Figure
DMN601K_DIE (ESD Protected) Q1 N-MOSFET 2
SD103AWS_DIE D1 Schottky Diode 2
Maximum Ratings, Total Device @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 3)
P
d
200 mW
Power Derating Factor above 25 °C
P
de
r
1.6 mW/°C
Output Current
I
ou
t
200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Junction Operation and Storage Temperature Range
T
j
, T
stg
-55 to +150
°C
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of N-MOSFET)
R
θ
JA
625
°C/W
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Fig 1. SOT-363
Fig 2. Schematic and Pin Configuration
Please click here to visit our online spice models database.
DS30911 Rev. 7 - 2 2 of 8
www.diodes.com
NMSD200B01
© Diodes Incorporated
Maximum Ratings: @T
A
= 25°C unless otherwise specified
Sub-Component Device: ESD Protected N-Channel MOSFET (Q1)
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
60 V
Drain Gate Voltage (RGS <+ 1MOhm)
V
DGR
60 V
Gate Source Voltage Continuous
Pulsed (tp<50 uS)
V
GSS
+/-20
V
+/-40
Drain Current (Page 1: Note 3) Continuous (V
gs
=10V)
Pulsed (tp<10uS, Duty Cycle<1%)
I
D
200
mA
800
Continuous Source Current
I
S
200 mA
Sub-Component Device: Schottky Diode (D1) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
VR
40 V
RMS Reverse Voltage
V
R
(
RMS
)
28 V
Forward Continuous Current (Page 1: Note 3)
I
FM
350 mA
Non-Repetitive Peak Forward Surge Current @ t<1.0 s
I
FSM
1.5 A
Electrical Characteristics:
ESD Protected N-Channel MOSFET (Q1) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BV
DSS
V
BR
(
DSS
)
60
⎯ ⎯
V
V
GS
= 0V, I
D
= 10μA
Zero Gate Voltage Drain Current (Drain Leakage Current)
I
DSS
⎯ ⎯
1
μA
V
GS
= 0V, V
DS
= 60V
Gate Body Leakage Current, Forward
I
GSSF
⎯ ⎯
10
μA
V
GS
= 20V, V
DS
= 0V
Gate Body Leakage Current, Reverse
I
GSSR
⎯ ⎯
-10
μA
V
GS
= -20 V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply Voltage)
V
GS(th)
1 1.6 2.5 V
V
DS
= V
GS
=10V, I
D =
0.25mA
1.1 1.8 3 V
V
DS
= V
GS
= 10V, I
D =
1mA
Static Drain-Source On-State Voltage
V
DS(on)
⎯
0.09 1.5 V
V
GS
= 5V, I
D
= 50mA
⎯
0.62 1.25 V
V
GS
= 10V, I
D
= 500mA
On-State Drain Current
I
D
(
on
)
500
⎯ ⎯
mA
V
GS
= 10V, V
DS
>=2*V
DS
(
ON
)
Static Drain-Source On Resistance
R
DS (on)
⎯
1.6 3
Ω
V
GS
= 5V, I
D
= 50mA
⎯
1.25 2
V
GS
= 10V, I
D
= 500mA
Forward Transconductance
g
FS
80 260
⎯
mS
V
DS
>=2*V
DS
(
ON
)
,
I
D
=200mA
Dynamic Characteristics
Input Capacitance
C
iss
⎯ ⎯
50 pF
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
⎯ ⎯
25 pF
Reverse Transfer Capacitance
C
rss
⎯ ⎯
5 pF
Switching Characteristics
Turn-On Delay Time
t
d
on
)
⎯ ⎯
20 ns
⎯
Turn-Off Delay Time
t
d
(
off
)
⎯
40 ns
⎯
Drain-Source (Body) Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward On-Voltage
V
SD
⎯
0.88 1.5 V
V
GS
= 0V, I
S
= 300 mA*
Maximum Continuous Drain-Source Diode Forward Current
(Reverse Drain Current)
I
S
⎯ ⎯
300 mA
⎯
Maximum Pulsed Drain-Source Diode Forward Current
I
SM
⎯ ⎯
800 mA
⎯
Electrical Characteristics: Schottky Barrier Diode (D1) @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 4)
V
(
BR
)
R
40
⎯ ⎯
V
I
R
= 10μA
Forward Voltage Drop (Note 4)
V
FM
⎯ ⎯
0.37
V
I
F
=20mA
⎯ ⎯
0.6
I
F
=200mA
Peak Reverse Current (Note 4)
I
RM
⎯ ⎯
5
μA
V
R
= 30V
Total Capacitance
C
T
⎯
28
⎯
pF
V
R
= 0V, f = 1.0 MHz
Reverse Recovery Time
t
r
r
⎯
10
⎯
ns
I
F
=I
R
= 200 mA, I
rr
= 0.1xI
R
, R
L
= 100 Ω
Notes: 4. Short duration pulse test used to minimize self-heating effect.
DS30911 Rev. 7 - 2 3 of 8
www.diodes.com
NMSD200B01
© Diodes Incorporated
Typical Characteristics
T , AMBIENT TEMPERATURE (°C)
Fig. 3, Max Power Dissipation vs. Ambient Temperature
A
Typical N-Channel MOSFET-Q1 (ESD Protected) Characteristics
0
0.2
0.4
0.6
0.8
1.0
01 2 3 4
5
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
1.2
1.4
V , GATE-SOURCE VOLTAGE
Fig. 5 Transfer Characteristics
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
123
4
5
6
T , JUNCTION TEMPERATURE (°C)
Fig. 6 Gate Threshold Voltage vs. Junction Temperature
ch
0
0.5
1
1.5
2
-50
-25
02550
75 100
125 150
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th),
0.1
I DRAIN CURRENT (A)
Fig. 7 Static Drain-Source On-Resistance vs. Drain Current
D
,
1
10
0.001 0.01 0.1 1
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
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NMSD200B01-7

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Trans MOSFET N-CH 60V 0.2A 6-Pin SOT-363 T/R
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