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IRF7494PBF
P1-P3
P4-P6
P7-P8
IRF7494PbF
4
www.irf.com
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
1
10
100
1000
V
DS
, D
rain-
to-S
ource Vol
tage (V
)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0
5
10
15
20
25
30
35
40
45
Q
G
,
Tot
al Gat
e Charge (
nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 120V
V
DS
= 75V
VDS= 30
V
I
D
= 3.
1A
0.2
0.
3
0.4
0.5
0.6
0.
7
0.8
0.
9
1.0
V
SD
, S
ource-t
o-Drai
n Vol
tage (V
)
0.1
1
10
100
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 150°
C
V
GS
= 0V
0
1
10
100
1000
V
DS
, D
rain-
to-S
ource Vol
tage (V
)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
T
A
= 25°
C
Tj
= 150°
C
Si
ngle P
ulse
100µsec
1msec
10msec
IRF7494PbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
%
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
25
50
75
100
125
150
T
A
, A
mbient
Temperat
ure (°
C)
0
1
2
3
4
5
6
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SIN
GLE PUL
SE
( TH
ERMAL R
ESPONSE )
Note
s:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
IRF7494PbF
6
www.irf.com
Fig 13.
On-Resistance vs. Gate Voltage
Fig 12.
On-Resistance vs. Drain Current
Fig 14a&b.
Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b.
Unclamped Inductive Test circuit
and Waveforms
Fig 15c.
Maximum Avalanche Energy
vs. Drain Current
t
p
V
(B
R)D
SS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.
T
L
V
DS
+
-
V
DD
DRIVE
R
A
15V
20V
1K
VCC
DUT
0
L
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
4
6
8
10
12
14
16
18
20
V
GS,
Gat
e -to -S
ource Vol
tage (V
)
20
30
40
50
60
70
80
90
100
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 5.
1A
T
J
= 25°
C
T
J
= 125°
C
0
5
10
15
20
25
30
35
40
45
I
D
, D
rain C
urrent (
A)
30
35
40
45
50
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
Vgs =
10V
25
50
75
100
125
150
St
arti
ng T
J
, Junct
ion T
emperatur
e (°C)
0
100
200
300
400
500
600
700
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TO
P 1.4A
2.5A
BOT
T
O
M
3.1A
P1-P3
P4-P6
P7-P8
IRF7494PBF
Mfr. #:
Buy IRF7494PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 150V 1 N-CH HEXFET 44mOhms 36nC
Lifecycle:
New from this manufacturer.
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