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MBR830MFST3G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 0
1 Publication Order Number:
MBR830MFS/D
MBR830MFS, NRVB830MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• Wettable Flacks Option Available
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
• Case: Epoxy, Molded
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
30
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 143°C)
I
F(AV)
8.0 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave,
20 kHz, T
C
= 143°C)
I
FRM
16 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
FSM
150 A
Storage Temperature Range T
stg
−65 to +150 °C
Operating Junction Temperature T
J
−40 to +150 °C
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
100 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
SCHOTTKY BARRIER
RECTIFIERS
8 AMPERES
30 VOLTS
http://onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
MARKING
DIAGRAM
B830
AYWZZ
A
A
A
Not Used
C
C
1
B830 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
Device Package Shipping†
ORDERING INFORMATION
MBR830MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR830MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB830MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB830MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
MBR830MFS, NRVB830MFS
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
− 2.0 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(i
F
= 8 Amps, T
J
= 125°C)
(i
F
= 8 Amps, T
J
= 25°C)
v
F
0.44
0.50
0.57
0.70
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
15
0.020
50
0.200
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
0.1
1.0
10
100
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.0
0.1
1
10
100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
151050
1.E−10
30151050
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
125°C
150°C
25°C
−40°C
125°C
150°C
25°C −40°C
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= −40°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= −40°C
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
302520 2520
MBR830MFS, NRVB830MFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
60 80 100 120 140 160
10
100
1000
10000
0 5 10 15 20 25 30
Figure 5. Typical Junction Capacitance Figure 6. Current Derating TO−220AB
V
R
, REVERSE VOLTAGE (V) T
C
, CASE TEMPERATURE (°C)
Figure 7. Forward Power Dissipation
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
43210
0
1
2
3
5
6
7
8
Figure 8. Thermal Response
PULSE TIME (sec)
C, JUNCTION CAPACITANCE (pF)
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
P
F(AV)
, AVERAGE FORWARD
POWER DISSIPATION (W)
R(t) (°C/W)
T
J
= 25°C
R
q
JC
= 2.0°C/W
Square Wave
dc
T
J
= 150°C
4
Square Wave
dc
I
PK
/I
AV
= 20
I
PK
/I
AV
= 10
I
PK
/I
AV
= 5
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered to
a 600 mm
2
− oz copper pad on PCB
P1-P3P4-P4

MBR830MFST3G

Mfr. #:
Buy MBR830MFST3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 8.0 A, 30 V SCHOTTKY DIOD
Lifecycle:
New from this manufacturer.
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