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BAT74,215

P1-P3P4-P6P7-P9P10-P11
BAT74_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 3 of 10
NXP Semiconductors
BAT74
Schottky barrier double diode
6. Thermal characteristics
[1] Refer to SOT143B standard mounting conditions.
7. Characteristics
[1] Temperature coefficient of forward voltage −0.6 %/K.
[2] Pulse test: t
p
= 300 μs; δ =0.02.
[3] When switched from I
F
= 10 mA to I
R
=10mA; R
L
= 100 Ω; measured at I
R
=1mA.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 500 K/W
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
V
F
forward voltage I
F
= 0.1 mA - - 240 mV
I
F
=1mA
[1]
- - 320 mV
I
F
= 10 mA - - 400 mV
I
F
= 30 mA - - 500 mV
I
F
= 100 mA - - 800 mV
I
R
reverse current V
R
=25V
[2]
--2 μA
C
d
diode capacitance V
R
=1V; f=1MHz --10pF
t
rr
reverse recovery
time
[3]
--5 ns
BAT74_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 4 of 10
NXP Semiconductors
BAT74
Schottky barrier double diode
(1) T
amb
= 125 °C
(2) T
amb
=85°C
(3) T
amb
=25°C
(1) T
amb
= 125 °C
(2) T
amb
=85°C
(3) T
amb
=25°C
Fig 1. Forward current as a function of forward
voltage; typical values
Fig 2. Reverse current as a function of reverse
voltage; typical values
f=1MHz; T
amb
=25°C Standard footprint
Fig 3. Diode capacitance as a function of reverse
voltage; typical values
Fig 4. Power derating curve
10
3
10
2
10
−1
I
F
(mA)
V
F
(V)
10
1
1.20.80.40
msa892
(3)(2)(1)
(3)(2)(1)
0102030
V
R
(V)
10
3
10
2
10
−1
I
R
(μA)
10
1
(1)
(2)
(3)
msa893
0102030
0
5
10
15
V
R
(V)
C
d
(pF)
msa891
msa894
0
100
200
300
P
tot
(mW)
150750
T
amb
(°C)
BAT74_3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 19 April 2010 5 of 10
NXP Semiconductors
BAT74
Schottky barrier double diode
8. Test information
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
(1) I
R
=1mA
Fig 5. Reverse recovery time test circuit and waveforms
t
rr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50 Ω
I
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
Fig 6. Package outline BAT74 (SOT143B)
04-11-16Dimensions in mm
3.0
2.8
1.1
0.9
2.5
2.1
1.4
1.2
1.7
1.9
0.48
0.38
0.15
0.09
0.45
0.15
0.88
0.78
21
34
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
BAT74 SOT143B 4 mm pitch, 8 mm tape and reel -215 -235
P1-P3P4-P6P7-P9P10-P11

BAT74,215

Mfr. #:
Buy BAT74,215
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers SCHOTTKY 30V ISO
Lifecycle:
New from this manufacturer.
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