© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 3
1 Publication Order Number:
BCW33LT1/D
BCW33LT1
General Purpose Transistor
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
32 Vdc
Collector − Base Voltage V
CBO
32 Vdc
Emitter − Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2),
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping
†
ORDERING INFORMATION
BCW33LT1 SOT−23 3000/Tape & Reel
SOT−23
(TO−236AB)
CASE 318
PLASTIC
1
2
3
D3 M G
G
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
BCW33LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
D3 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BCW33LT3 SOT−23 10,000/Tape & Ree
BCW33LT3G SOT−23
(Pb−Free)
10,000/Tape & Ree