STY100NS20FD

May 2006 Rev 3 1/12
12
STY100NS20FD
N-channel 200V - 0.022 - 100A - Max247
MESH OVERLAY™ Power MOSFET
General features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
± 20V gate to source voltage rating
Low intrinsic capacitance
Fast body-drain diode:low t
rr
, Q
rr
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performances. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(ON)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Applications
Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STY100NS20FD 200V <0.024 100A
1
2
3
Max247
www.st.com
Order codes
Part number Marking Package Packaging
STY100NS20FD Y100NS20FD Max247 Tube
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Obsolete Product(s) - Obsolete Product(s)
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Contents STY100NS20FD
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STY100NS20FD Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 200 V
V
DGR
Drain-gate voltage (R
GS
= 20 k) 200 V
V
GS
Gate- source voltage ±20 V
I
D
Drain current (continuos) at T
C
= 25°C 100 A
I
D
Drain current (continuos) at T
C
= 100°C 63 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 400 A
P
TOT
Total dissipation at T
C
= 25°C 450 W
Derating factor 3.6 W/°C
dv/dt
(2)
2. I
SD
<100A, di/dt < 200A/µs, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 25 V/ns
T
stg
Storage temperature –65 to 150 °C
T
j
Max. operating junction temperature 150 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case Max 0.277 °C/W
Rthj-amb Thermal resistance junction-ambient Max 30 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche data
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
110 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
750 mJ
Obsolete Product(s) - Obsolete Product(s)

STY100NS20FD

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 200 Volt 100 A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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