TC7SH02FSTPL3

TC7SH02FS
2014-03-01
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH02FS
2-Input NOR Gate
Features
High speed operation : t
pd
= 3.6ns (typ.)
at V
CC
= 5V, 15pF
Low power dissipation : I
CC
= 2μA (max) at Ta = 25°C
High noise immunity : V
NIH
= V
NIL
=28% V
CC
(min)
5.5V tolerant inputs
Wide operating voltage range : V
CC
= 2 to 5.5V
Marking Pin Assignment
(top view)
Absolute Maximum Ratings ( Ta = 25°C)
Characteristics Symbol Rating Unit
Supply voltage V
CC
0.5 to 7 V
DC input voltage V
IN
0.5 to 7 V
DC output voltage V
OUT
0.5 to V
CC
+ 0.5 V
Input diode current I
IK
20 mA
Output diode current I
OK
± 20 (Note 1) mA
DC output current I
OUT
± 25 mA
DC V
CC
/ground current I
CC
± 50 mA
Power dissipation P
D
50 mW
Storage temperature T
stg
65 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Note1: V
OUT
< GND, V
OUT
> V
CC
SON5-P -0.35
(fSV)
Weight : 0.001 g (typ.)
Product name
H 3
5 V
CC
4 OUT Y
GND 2
IN B 3
IN A 1
Start of commercial production
2003-09
TC7SH02FS
2014-03-01
2
IEC Logic Symbol Truth Table
A B Y
L L H
L H L
H L L
H H L
Operating Ranges
Characteristics Symbol Rating Unit
Supply voltage V
CC
2.0 to 5.5 V
Input voltage V
IN
0 to 5.5
V
Output voltage V
OUT
0 to V
CC
V
Operating temperature T
opr
40 to 85 °C
0 to 100 (V
CC
= 3.3 ± 0.3 V)
Input rise and fall time dt/dv
0 to 20 (V
CC
= 5.0 ± 0.5 V)
ns/V
OUT Y
IN A
IN B
>
1
TC7SH02FS
2014-03-01
3
Electrical Characteristics
DC Characteristics
Ta = 25°C Ta = 40 to 85°C
Characteristics Symbol Test Condition
V
CC
(V)
Min Typ. Max Min Max
Unit
2.0 1.50 1.50
High-level input
voltage
V
IH
3.0 to
5.5
V
CC
× 0.7
V
CC
× 0.7
2.0 0.5 0.5
Low-level input
voltage
V
IL
3.0 to
5.5
V
CC
× 0.3
V
CC
× 0.3
V
2.0 1.9 2.0 1.9
3.0 2.9 3.0 2.9
I
OH
= 50 μA
4.5 4.4 4.5 4.4
I
OH
= 4 mA 3.0 2.58 2.48
High-level output
voltage
V
OH
V
IN
= V
IL
I
OH
= 8 mA 4.5 3.94 3.80
2.0 0.0 0.1 0.1
3.0 0.0 0.1 0.1
I
OL
= 50 μA
4.5 0.0 0.1 0.1
I
OL
= 4 mA 3.0 0.36 0.44
Low-level output
voltage
V
OL
V
IN
= V
IH
or
V
IL
I
OL
= 8 mA 4.5 0.36 0.44
V
Input leakage
current
I
IN
V
IN
= 5.5 V or GND 0 to 5.5 ± 0.1 ± 1.0 μA
Quiescent supply
current
I
CC
V
IN
= V
CC
or GND 5.5 2.0 20.0 μA

TC7SH02FSTPL3

Mfr. #:
Manufacturer:
Toshiba
Description:
Logic Gates L-MOS NOR Gate x 1
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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