SFH640-3

SFH640
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 08-Sep-11
1
Document Number: 83682
For technical questions, contact: optocoupler.answers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output,
with Base Connection, 300 V BV
CEO
DESCRIPTION
The SFH640 is an optocoupler with very high BV
CER
, a
minimum of 300 V. It is intended for telecommunications
applications or any DC application requiring a high blocking
voltage.
FEATURES
Good CTR linearity with forward current
Low CTR degradation
Very high collector emitter breakdown voltage,
BV
CER
= 300 V
Isolation test voltage: 5300 V
RMS
Low coupling capacitance
High common mode transient immunity
Phototransistor optocoupler 6 pin DIP package with base
connection
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
UL1577, file no. E52744 system code H or J, double
protection
DIN EN 60747-5-2 (VDE 0884) available with option 1
CSA 93751
BSI IEC 60950; IEC 60065
Notes
Additional options may be possible, please contact sales office.
(1)
Also available in tubes, do not put T on the end.
1
2
3
6
5
4
B
C
E
A
C
NC
i179004-3
ORDERING INFORMATION
SFH640 - #X0##T
PART NUMBER CTR
BIN
PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE
CTR (%)
10 mA
UL, CSA, BSI 63 to 125 100 to 200
DIP-6 SFH640-2 SFH640-3
SMD-6, option 7 SFH640-2X007 SFH640-3X007T
(1)
VDE, UL, CSA, BSI 63 to 125 100 to 200
SMD-6, option 9 - SFH640-3X019T
(1)
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6.0 V
DC forward current I
F
60 mA
Surge forward current t
p
10 μs I
FSM
2.5 A
Total power dissipation P
diss
100 mW
> 0.1 mm
> 0.7 mm
7.62 mm
DIP
Option 7
Option 9
SFH640
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 08-Sep-11
2
Document Number: 83682
For technical questions, contact: optocoupler.answers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter voltage V
CEO
300 V
Collector base voltage V
CBO
300 V
Emitter base voltage V
EBO
7.0 V
Collector current I
C
50 mA
Surge collector current t
p
10 ms I
C
100 mA
Total power dissipation P
diss
300 mW
COUPLER
Isolation test voltage
between emitter and detector
V
ISO
5300 V
RMS
7500 V
PK
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Insulation thickness between emitter
and detector
0.4 mm
Creepage distance 7mm
Clearance distance 7mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
CTI 175
Storage temperature range T
stg
- 55 to + 150 °C
Operating temperature range T
amb
- 55 to + 100 °C
Soldering temperature
(1)
max. 10 s, dip soldering:
distance to seating plane 1.5 mm
T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
V
1.1 1.5 V
Reverse voltage I
R
= 10 μA V
R
6V
Reverse current V
R
= 6 V I
R
0.01 10 μA
Capacitance V
F
= 0 V, f = 1 MHz C
O
25 pF
Thermal resistance R
thja
750 K/W
OUTPUT
Collector emitter breakdown
voltage
I
CE
= 1 mA,
R
BE
= 1 M
BV
CER
300 V
Voltage emitter base I
EB
= 10 μA BV
BEO
7V
Collector emitter capacitance V
CE
= 10 V, f = 1 MHz C
CE
7pF
Collector base capacitance V
CB
= 10 V, f = 1 MHz C
CB
8pF
Emitter base capacitance V
EB
= 5 V, f = 1 MHz C
EB
38 pF
Thermal resistance R
thja
250 K/W
COUPLER
Coupling capacitance C
C
0.6 pF
Saturation voltage collector
emitter
I
F
= 10 mA, I
C
= 3.2 mA SFH640-2 V
CEsat
0.25 0.4 V
I
F
= 10 mA, I
C
= 5 mA SFH640-3 V
CEsat
0.25 0.4 V
Collector emitter leakage
current
V
CE
= 200 V, R
BE
= 1 M I
CER
1 100 nA
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
SFH640
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 08-Sep-11
3
Document Number: 83682
For technical questions, contact: optocoupler.answers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Switching Times Measurement Test Circuit and Waveform
Fig. 2 - Switching Times Measurement Test Circuit and Waveform
Fig. 3 - Current Transfer Ratio (typ.)
Fig. 4 - Diode Forward Voltage (typ.)
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio
I
F
= 10 mA, V
CE
= 10 V SFH640-2 I
C
/I
F
63 125 %
I
F
= 1 mA, V
CE
= 10 V SFH640-2 I
C
/I
F
22 45 %
I
F
= 10 mA, V
CE
= 10 V SFH640-3 I
C
/I
F
100 200 %
I
F
= 1 mA, V
CE
= 10 V SFH640-3 I
C
/I
F
34 70 %
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time I
C
= 2 mA, R
L
= 100 , V
CC
= 10 V t
on
s
Rise time I
C
= 2 mA, R
L
= 100 , V
CC
= 10 V t
r
2.5 μs
Turn-off time I
C
= 2 mA, R
L
= 100 , V
CC
= 10 V t
off
s
Fall time I
C
= 2 mA, R
L
= 100 , V
CC
= 10 V t
f
5.5 μs
isfh640_01a
I
F
R
L
I
C
V
CC
47 Ω
isfh640_01b
10 %
90 %
Input pulse
Output pulse
t
r
t
on
t
f
t
off
100
80
10
-4
10
-3
10
-2
10
-1
isfh640_02
NCTR
I
F
/A
V
CE
= 10 V
1
normalized to
I
F
= 10 mA,
NCTR = f (I
F
)
60
50
30
10
0
1.2
V
10
-1
55
5mA
10
0
10
1
10
2
isfh640_03
I
F
1.1
1.0
0.9
I/
F
V
F
= f (I
F,
T
A
)
25 ºC
50 ºC
75 ºC

SFH640-3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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