SFH640
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 08-Sep-11
4
Document Number: 83682
For technical questions, contact: optocoupler.answers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Output Characteristics (typ.)
Fig. 6 - Output Characteristics (typ.)
Fig. 7 - Transistor Capacitances (typ.)
Fig. 8 - Collector-Emitter Leakage Current (typ.)
Fig. 9 - Permissible Loss Diode
Fig. 10 - Permissible Power Dissipation
20
17.5
15
12.5
0
isfh640_04
I
CE
/mA
V
CE
/V
I
CE =
f(V
CE
,
I
B
)
10
7.5
5
2.5
/
B
= 100 µA
/
B
= 80 µA
/
B
= 60 µA
/
B
= 40 µA
/
B
= 20 µA
10
-2
10
-1
10
0
10
2
10
1
30
25
20
15
0
isfh640_05
I
CE
/mA
V
CE
/V
I
CE =
f(V
CE
,
I
F
)
10
5
/
F
= 20mA
/
F
= 16mA
/
F
= 14mA
/
F
= 12mA
/
F
= 10mA
10
-2
10
-1
10
0
10
1
10
2
100
90
80
70
0
10
-2
10
-1
10
0
10
1
10
2
isfh640_06
C
XX
/pF
V
XX
/V
f = 1.0 MHz,
I
CE
=
f(V
CE
)
C
CB
= f(V
CB
),
C
EB
= f(V
EB
)
60
50
40
30
20
10
C
EB
C
CB
C
CE
10
-6
10
-7
10
-8
10
-9
0 25 50 75 100 125 150 175 200
isfh640_07
P
tot
/mW
V
CE
/V
I
F
= 0, R
BE
= 1.0 MW,
I
CER
= f(V
CE
)
10
-10
10
-11
10
-12
100
90
80
70
0 10 20 30 40 50 60 70 80 90 100
isfh640_08
I
F
/mA
T
A
/º C
I
F
= f (T
A
)
60
50
40
30
20
10
0
400
350
300
250
0
0 102030405060708090100
isfh640_09
P
tot
/mW
T
A
/º C
P
IOT
=
f (T
A
)
200
150
100
50
Transistor
Diode
